Semiconductor
IRF120, IRF121,
IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,
N-Channel, Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci鏗乪d level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09594.
October 1997
Features
鈥?8.0A and 9.2A, 80V and 100V
鈥?r
DS(ON)
= 0.27鈩?and 0.36鈩?/div>
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRF120
IRF121
IRF122
IRF123
PACKAGE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
BRAND
IRF120
Symbol
D
G
IRF121
IRF122
IRF123
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1997
File Number
1565.2
2-1
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