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IR51H320 Datasheet

  • IR51H320

  • SELF-OSCILLATING HALF-BRIDGE

  • 6頁

  • IRF

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Data Sheet No. PD-6.067B
IR51H320
SELF-OSCILLATING HALF-BRIDGE
Features
n
n
n
n
n
n
Product Summary
V
IN
(max)
Duty Cycle
Deadtime
R
DS(on)
P
D
(T
A
= 25 潞C)
400V
50%
1.2碌s
1.8鈩?/div>
鈩?/div>
2.0W
Output Power MOSFETs in half-bridge configuration
400V Rated Breakdown Voltage
High side gate drive designed for bootstrap operation
Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
Internal oscillator with programmable frequency
1
1
.
4
脳 (
R
T
+
75
鈩?/div>
) 脳
C
T
Zener clamped Vcc for offline operation
Half-bridge output is out of phase with R
T
f
=
Description
The IR51H320 is a high voltage, high speed, self-
oscillating half-bridge. Proprietary HVIC and latch
immune CMOS technologies, along with the
HEXFET
廬
power MOSFET technology, enable
ruggedized single package construction. The front-end
features a programmable oscillator which functions
similar to the CMOS 555 timer. The supply to the
control circuit has a zener clamp to simplify offline
operation. The output features two HEXFETs in a
half-bridge configuration with an internally set
deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and
low side power MOSFETs are matched to simplify use
in 50% duty cycle applications. The device can
operate up to 400 volts.
Package
IR51H320
9506
Typical Connection
U P TO 400V D C BU S
V IN
IR 5 1 H 3 2 0
1
V
CC
V
B
6
2
R
T
V IN
9
RT
3
C
T
VO
7
CT
4
COM
TO LO AD
COM
To Order

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