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Micropower startup
PD (TA = 25
o
C)
Package
Description
The IR51H(D)XXX are complete high voltage, high speed, self-
oscillating half-bridge circuits. Proprietary HVIC and latch im-
mune CMOS technologies, along with the HEXFET
廬
power
MOSFET technology, enable ruggedized single package construc-
tion. The front-end features a programmable oscillator which func-
tions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation. The output
features two HEXFETs in a half-bridge configuration with an in-
ternally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.
Typical Connection
DC Bus
VIN
D1
IR51H(D)XXX
1
Vcc
V
B
6
External
Fast recovery diode D1 is
not required for HD type
2
R
T
3
C
T
4
R
T
V
IN
9
C
T
VO
7
COM
TO,
LOAD
COM