Bulletin I0210J 12/98
IR250SG12HCB
PHASE CONTROL THYRISTORS
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Square 250 mils
4"
1200 V
Glassivated MESA
Reference IR Packaged Part:
n. a.
Major Ratings and Characteristics
Parameters
V
TM
V
RRM
I
GT
V
GT
I
H
I
L
Maximum On-state Voltage
Reverse Breakdown Voltage
Max. Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
Holding Current Range
Maximum Latching Current
Units
1.3 V
1200 V
100 mA
2V
5 to 200 mA
400 mA
Test Conditions
T
J
= 25擄C, I
T
= 25 A
T
J
= 25擄C, I
RRM
= 100 碌A(chǔ)
(1)
T
J
= 25擄 C, anode supply = 6 V, resistive load
T
J
= 25擄 C, anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
250 x 250 mils (see drawing)
100 mm, with std. <110> flat
370 碌m 鹵 10 碌m
130 碌m
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
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