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IR2308SPBF Datasheet

  • IR2308SPBF

  • HALF-BRIDGE DRIVER

  • 109.04KB

  • 8頁

  • IRF

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Data Sheet No. PD60209 revC
IR2308
(S) & (PbF)
HALF-BRIDGE DRIVER
Features
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Floating channel designed for bootstrap operation
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Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Outputs in phase with inputs
Logic and power ground +/- 5V offset.
Internal 540ns dead-time
Lower di/dt gate driver for better noise immunity
Also available LEAD_FREE
Packages
8-Lead SOIC - IR2308S
Also available
LEAD-FREE (PbF)
8-Lead PDIP
IR2308
2106//2108//2109/2304/2308 Feature Comparison
Part
2106
21064
2108
21084
2109
21094
2304
2308
Input
logic
HIN/LIN
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
Dead-Time
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
none
Internal 540ns
Programmable 0.54~5
碌s
Description
Internal 540ns
The IR2308(S) are high voltage, high speed power
IN/SD
yes
Programmable 0.54~5
碌s
MOSFET and IGBT drivers with dependent high and
yes
HIN/LIN
Internal 100ns
COM
low side referenced output channels. Proprietary HVIC
Internal 540ns
COM
HIN/LIN
yes
and latch immune CMOS technologies enable rug-
gedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1

IR2308SPBF 產(chǎn)品屬性

  • 950

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān)

  • -

  • 半橋

  • 非反相

  • 220ns

  • 200mA

  • 1

  • 2

  • 600V

  • 10 V ~ 20 V

  • -40°C ~ 125°C

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 管件

  • *IR2308SPBF

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