鈥?/div>
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V (IR2106(4))
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs (IR2106)
8-Lead SOIC
8-Lead PDIP
14-Lead SOIC
14-Lead PDIP
Description
The IR2106(4)(S) are high voltage,
Cross-
high speed power MOSFET and
Input
conduction
Dead-Time
Ground Pins
Ton/Toff
Part
IGBT drivers with independent high
prevention
logic
logic
and low side referenced output chan-
2106/2301
COM
HIN/LIN
no
none
220/200
nels. Proprietary HVIC and latch
21064
VSS/COM
immune CMOS technologies enable
2108
Internal 540ns
COM
HIN/LIN
yes
220/200
Programmable 0.54~5
碌s
21084
VSS/COM
ruggedized monolithic construction.
2109/2302
Internal 540ns
COM
The logic input is compatible with
IN/SD
yes
750/200
Programmable 0.54~5
碌s
21094
VSS/COM
standard CMOS or LSTTL output,
yes
160/140
Internal 100ns
HIN/LIN
COM
2304
down to 3.3V logic. The output driv-
ers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating
channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 600 volts.
2106/2301//2108//2109/2302/2304
Feature Comparison
Typical Connection
V
CC
up to 600V
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
IR2106
HO
V
CC
HIN
up to 600V
V
CC
HIN
LIN
V
B
V
S
TO
LOAD
(Refer to Lead Assignments for cor-
rect pin configuration). This/These
diagram(s) show electrical connec-
tions only. Please refer to our Appli-
cation Notes and DesignTips for
proper circuit board layout.
LIN
IR21064
COM
LO
V
SS
V
SS
www.irf.com
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