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Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 5 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs
Packages
8 Lead PDIP
8 Lead SOIC
Description
The IR2301(S) are high voltage, high speed
power MOSFET and IGBT drivers with inde-
pendent high and low side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized mono-
lithic construction. The logic input is compatible
with standard CMOS or LSTTL output, down
to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for mini-
mum driver cross-conduction. The floating
channel can be used to drive an N-channel
power MOSFET or IGBT in the high side con-
figuration which operates up to 600 volts.
2106/2301//2108//2109/2302/2304 Feature Comparison
Part
2106/2301
21064
2108
21084
2109/2302
21094
2304
Input
logic
HIN/LIN
HIN/LIN
IN/SD
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
yes
yes
Dead-Time
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
COM
none
Internal 540ns
Programmable 0.54~5
碌s
Internal 540ns
Programmable 0.54~5
碌s
Internal 100ns
Typical Connection
up to 600V
(Refer to Lead
Assignments for
correct pin con-
figuration). This/
T h e s e
diagram(s)
show electrical
connections
only. Please re-
fer to our Appli-
cation Notes
and DesignTips
for proper circuit
board layout.
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
IR2301
www.irf.com
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