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IR21541 Datasheet

  • IR21541

  • 7頁

  • ETC

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上傳產品規(guī)格書

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Preliminary Data Sheet No. PD60132
I
IR21541
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
鈥?/div>
Integrated 600V half-bridge gate driver
鈥?/div>
15.6V zener clamp on Vcc
鈥?/div>
True micropower start up
鈥?/div>
Tighter initial deadtime control
鈥?/div>
Low temperature coefficient deadtime
鈥?/div>
Shutdown feature (1/6th Vcc) on C
T
pin
鈥?/div>
Increased undervoltage lockout Hysteresis (1V)
鈥?/div>
Lower power level-shifting circuit
鈥?/div>
Constant LO, HO pulse widths at startup
鈥?/div>
Lower di/dt gate driver for better noise immunity
鈥?/div>
High side output in phase with R
T
鈥?/div>
Excellent latch immunity on all inputs and outputs
鈥?/div>
ESD protection on all leads
Product Summary
V
OFFSET
Duty Cycle
Tr/Tp
V
clamp
Deadtime (typ.)
600V max.
50%
80/40ns
15.6V
0.6 碌s
Packages
Description
The IR21541 is an improved version of the popular
IR2152 gate driver IC, and incorporates a high voltage
half-bridge gate driver with a front end oscillator simi-
lar to the industry standard CMOS 555 timer. The
IR21541 provides more functionality and is easier to
use than previous ICs. A shutdown feature has been
designed into the CT pin, so that both gate driver out-
puts can be disabled using a low voltage control sig-
nal. In addition, the gate driver output pulse widths are
the same once the rising undervoltage lockout thresh-
old on VCC has been reached, resulting in a more
stable profile of frequency vs time at startup. Noise im-
munity has been improved significantly, both by low-
ering the peak di/dt of the gate drivers, and by
increasing the undervoltage lockout hysteresis to 1V.
Finally, special attention has been payed to maximiz-
ing the latch immunity of the device, and providing
comprehensive ESD protection on all pins.
8 Lead PDIP
8 Lead SOIC
Typical Connection
600V
MAX
VCC
VB
HO
RT
VS
CT
Shutdown
COM
LO

IR21541相關型號PDF文件下載

  • 型號
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    廠商
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  • 英文版
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  • 英文版
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    HIGH AND LOW SIDE DRIVER
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