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IR2125Z Datasheet

  • IR2125Z

  • IR2125Z

  • 16頁

  • ETC

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PD - 60024C
IR2125Z
CURRENT LIMITING SINGLE CHANNEL DRIVER
Features
n
Floating channel designed for bootstrap
operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 12 to 18V
n
Undervoltage lockout
n
Current detection and limiting loop to limit driven
power transistor current
n
Error lead indicates fault conditions and pro
grams shutdown time
n
Output in phase with input
Product Summary
VOFFSET
IO+/-
VOUT
VCSth
ton/off (typ.)
400V max.
1A / 2A
12 - 18V
230 mv
150 & 150 ns
Description
The IR2125Z is a high voltage, high speed power
MOSFET and IGBT driver with over-current limiting
protection circuitry. Proprietary GVIC and latch immune
CMOS technologies enable ruggedized minilithic
consturction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. the ouput driver features a high
pulse current buffer stage designed for minimum driver
cross-conduction.
The protection circuitry detects over-current in the driven
power transistor and limits the gate drive voltage. Cycle
by cycle shutdown is programmed by an external
capacitor which directly controls the time interval
between detection of the over-current limiting conditions
and latched shutdown. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high
or low side configuration which operates up to 400 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings
are measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
ERR
V
CS
V
IN
dV
s
/dt
P
D
R
qJA
T
J
T
S
T
L
Parameter
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Logic Supply Voltage
Error Signal Voltage
Current Sense Voltage
Logic Input Voltage
Allowable Offset Supply Voltage Transient
Package Power Dissipation @ T
A
攏 +25擄C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Min.
-0.3
-5
V
S
- 0.3
-0.3
-0.3
V
S
- 0.3
-0.3
鈥?/div>
鈥?/div>
鈥?/div>
-55
-55
鈥?/div>
Max.
V
S
+ 20
400
V
B
+ 0.3
20
V
CC
+ 0.3
V
B
+ 0.3
V
CC
+ 0.3
50
1.0
100
125
150
300
Units
V
V/ns
W
擄C/W
擄C
www.irf.com
1
5/16/01

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