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Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
FAULT
lead indicates shutdown has occured
Output out of phase with input
Product Summary
V
OFFSET
I
O
+/-
V
OUT
V
CSth
t
on/off
(typ.)
600V max.
110 mA / 110 mA
10 - 20V
500 mV
250 & 200 ns
Description
The IR2122(S) is a high voltage, high speed power
MOSFET and IGBT driver. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible
with standard CMOS or LSTTL outputs, down to
3.3V. The protection circuity detects over-current in
the driven power transistor and terminates the gate
drive voltage. An open drain
FAULT
signal is pro-
vided to indicate that an over-current shutdown has
occurred. The output driver features a high pulse
current buffer stage designed for minimum cross-con-
duction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side
or low side configuration which operates up to 600
volts.
Packages
8-Lead SOIC
8-Lead PDIP
Typical Connection
V
CC
IN
FAULT
V
CC
IN
FAULT
COM
V
B
HO
CS
V
S
(Refer to Lead Assignments for correct pin configuration). This/These
diagram(s) show electrical connections only. Please refer to our
Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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