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operation
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
600V max.
200 mA / 420 mA
10 - 20V
125 & 105 ns
30 ns
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground 鹵5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Packages
Description
The IR2112(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
16-Lead SOIC
dized monolithic construction. Logic inputs are com-
(wide body)
14-Lead PDIP
patible with standard CMOS or LSTTL outputs, down
to 3.3V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to sim-
plify use in high frequency applications. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
up to 600V
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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