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IR2112-1 Datasheet

  • IR2112-1

  • MOSFET Driver

  • 15頁(yè)

  • ETC

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Data Sheet No. PD60026-K
IR2112
HIGH AND LOW SIDE DRIVER
Features
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Floating channel designed for bootstrap operation
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Fully operational to +600V
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Tolerant to negative transient voltage
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dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
Separate logic supply range from 5 to 20V
Logic and power ground 鹵5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
600V max.
200 mA / 420 mA
10 - 20V
125 & 105 ns
30 ns
Packages
Description
The IR2112 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs. The
output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. Propa-
gation delays are matched to simplify use in high fre-
quency applications. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
14 lead PDIP
16 lead SOIC
(wide body)
Typical Connection
14 lead PDIP
w/o lead 4
16 lead PDIP
w/o leads 4 & 5
up to 600V
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
TO
LOAD
www.irf.com
287

IR2112-1 產(chǎn)品屬性

  • 25

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān)

  • -

  • 高端和低端，獨(dú)立

  • 非反相

  • 125ns

  • 250mA

  • 1

  • 2

  • 600V

  • 10 V ~ 20 V

  • -40°C ~ 125°C

  • 通孔

  • 14-DIP（0.300"，7.62mm），13 引線

  • 16-DIP，15 引線

  • 管件

IR2112-1相關(guān)型號(hào)PDF文件下載

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