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Data Sheet No. PD-6.028C
IR2111
HALF-BRIDGE DRIVER
Features
n
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
CMOS Schmitt-triggered inputs with pull-down
n
Matched propagation delay for both channels
n
Internally set deadtime
n
High side output in phase with input
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Deadtime (typ.)
600V max.
200 mA / 420 mA
10 - 20V
850 & 150 ns
700 ns
Description
The IR2111 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for
half-bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible
with standard CMOS outputs. The output drivers
feature a high pulse current buffer stage designed
for minimum driver cross-conduction. Internal
deadtime is provided to avoid shoot-through in the
output half-bridge. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to
600 volts.
Packages
Typical Connection
up to 600V
V
CC
V
CC
IN
V
B
HO
V
S
TO
LOAD
IN
COM
LO
To Order
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-39