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IR2111PBF Datasheet

  • IR2111PBF

  • HALF-BRIDGE DRIVER

  • 15頁

  • IRF

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Data Sheet No. PD60028-M
IR2111(S) & (PbF)
HALF-BRIDGE DRIVER
Features
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Floating channel designed for bootstrap operation
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Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set deadtime
High side output in phase with input
Also available LEAD-FREE
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Deadtime (typ.)
600V max.
200 mA / 420 mA
10 - 20V
750 & 150 ns
650 ns
Description
Packages
The IR2111(S) is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for half-
bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with
standard CMOS outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
8-Lead PDIP
driver cross-conduction. Internal deadtime is provided
to avoid shoot-through in the output half-bridge. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
8-Lead SOIC
Typical Connection
up to 600V
V
CC
V
CC
IN
V
B
HO
V
S
TO
LOAD
IN
COM
LO
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1

IR2111PBF 產(chǎn)品屬性

  • 50

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān)

  • -

  • 高端和低端，同步

  • 非反相

  • 750ns

  • 250mA

  • 1

  • 2

  • 600V

  • 10 V ~ 20 V

  • -40°C ~ 125°C

  • 通孔

  • 8-DIP（0.300"，7.62mm）

  • 8-DIP

  • 管件

IR2111PBF相關(guān)型號PDF文件下載

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