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IR2110L Datasheet

  • IR2110L

  • HIGH AND LOW SIDE DRIVER

  • 144.59KB

  • 14頁

  • IRF

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Data Sheet No. PD-6.085
IR2110L4
HIGH AND LOW SIDE DRIVER
Features
n
Floating channel designed for bootstrap
operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
Separate logic supply range from 5 to 20V
Logic and power ground 鹵5V offset
n
CMOS Schmitt-triggered inputs with pull-down
n
Cycle by cycle edge-triggered shutdown logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
Product Summary
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Delay Matching
400V max.
2A / 2A
10 - 20V
120 & 94 ns
10 ns
Description
The IR2110L4 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side ref-
erenced output channels. Proprietary HVIC and latch im-
mune CMOS technologies enable ruggedized monolithic
construction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET
or IGBT in the high side configuration which operates up
to 400 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings
are measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
s
/dt
P
D
R
thJA
T
J
T
S
T
L
Parameter
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ T
A
攏 +25擄C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
Min.
-0.5
鈥?/div>
V
S
- 0.5
-0.5
-0.5
-0.5
V
CC
- 20
V
SS
- 0.5
鈥?/div>
鈥?/div>
鈥?/div>
-55
-55
鈥?/div>
Max.
V
S
+ 20
400
V
B
+ 0.5
20
V
CC
+ 0.5
V
SS
+ 20
V
CC
+ 0.5
V
DD
+ 0.5
50
1.6
75
125
Units
V
V/ns
W
擄C/W
擄C
g
2/14/97
150
300
1.5 (typical)

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