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IR2110LPBF Datasheet

  • IR2110LPBF

  • Half Bridge Based MOSFET Driver, 2A, PDIP14, MO-036AB, 14 PI...

  • 15頁

  • IRF

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Data Sheet No. PD60147-L
IR2110/IR2113
HIGH AND LOW SIDE DRIVER
Features
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Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
Separate logic supply range from 5 to 20V
Logic and power ground 鹵5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Product Summary
V
OFFSET
(IR2110)
(IR2113)
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
500V max.
600V max.
2A / 2A
10 - 20V
120 & 94 ns
10 ns
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Description
The IR2110/IR2113 are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. Logic in-
puts are compatible with standard CMOS or LSTTL
output. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configura-
tion which operates up to 500 or 600 volts.
Packages
14 Lead PDIP
IR2110/IR2113
14 Lead PDIP
w/o Lead 4
IR2110-1/IR2113-1
16 Lead PDIP
w/o leads 4 & 5
IR2110-2/IR2113-2
16 Lead SOIC
IR2110S/IR2113S
Typical Connection
up to 500V
or 600V
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
TO
LOAD
www.irf.com
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