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IR2110L6 Datasheet

  • IR2110L6

  • HIGH AND LOW SIDE DRIVER

  • 14頁(yè)

  • IRF

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Data Sheet No. PD-6.074
IR2110L6
HIGH AND LOW SIDE DRIVER
Features
n
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
Separate logic supply range from 5 to 20V
Logic and power ground 鹵5V offset
n
CMOS Schmitt-triggered inputs with pull-down
n
Cycle by cycle edge-triggered shutdown logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
Product Summary
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Delay Matching
600V max.
2A / 2A
10 - 20V
120 & 94 ns
10 ns
Description
The IR2110L6 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs. The
output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. Propa-
gation delays are matched to simplify use in high fre-
quency applications. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute volt-
ages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Parameter
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
s
/dt
P
D
R
胃JA
T
J
T
S
T
L
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic SupplyVoltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ T
A
鈮?/div>
+25擄C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
Min.
-0.5
鈥?/div>
V
S
- 0.5
-0.5
-0.5
-0.5
V
CC
- 20
V
SS
- 0.5
鈥?/div>
鈥?/div>
鈥?/div>
-55
-55
鈥?/div>
Max.
V
S
+ 20
600
V
B
+ 0.5
20
V
CC
+ 0.5
V
SS
+ 20
V
CC
+ 0.5
V
DD
+ 0.5
50
1.6
75
125
150
300
Units
V
V/ns
W
擄C/W
擄C
g
1.5 (typical)
To Order

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