鈥?/div>
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with HIN input
Low side output out of phase with LIN input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time, and
programmable up to 5us with one
external R
DT
resistor (IR21084)
Part
Lower di/dt gate driver for better
noise immunity
2106
2106//2108//2109/2304 Feature Comparison
Input
logic
HIN/LIN
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
Dead-Time
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
Ton/Toff
Description
The IR2108(4)(S) are high voltage, high
Internal 540ns
IN/SD
yes
750/200
speed power MOSFET and IGBT drivers with
Programmable 0.54~5
碌s
yes
160/140
HIN/LIN
Internal 100ns
dependent high and low side referenced
2304
COM
output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 600 volts.
21064
2108
21084
2109
21094
none
Internal 540ns
Programmable 0.54~5
碌s
220/200
220/200
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
up to 600V
IR2108
V
CC
HIN
LIN
V
CC
HIN
LIN
DT
V
SS
R
DT
V
SS
HO
V
B
V
S
IR21084
TO
LOAD
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
COM
LO
www.irf.com
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