鈥?/div>
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 5 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time
Lower di/dt gate driver for better noise
immunity
Shut down input turns off both channels
8-Lead SOIC also available LEAD-FREE (PbF).
8-Lead SOIC
IR2302(S)
(Also available LEAD-FREE (PbF))
8-Lead PDIP
IR2302
2106/2301//2108//2109/2302/2304 Feature Comparison
Part
2106/2301
21064
2108
21084
2109/2302
21094
Input
logic
HIN/LIN
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
Dead-Time
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
none
Internal 540ns
Programmable 0.54~5
碌s
Description
IN/SD
yes
The IR2302(S) are high voltage, high speed
Programmable 0.54~5
碌s
power MOSFET and IGBT drivers with depen-
yes
HIN/LIN
Internal 100ns
2304
COM
dent high and low side referenced output
channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers
feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can
be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to
600 volts.
Internal 540ns
Typical Connection
up to 600V
V
CC
V
CC
IN
SD
V
B
HO
V
S
LO
IR2302
TO
LOAD
IN
SD
COM
(Refer to Lead Assignments for
correct configuration). This/
These diagram(s) show elec-
trical connections only. Please refer to our Application Notes
and DesignTips for proper circuit board layout.
www.irf.com
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