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Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with HIN input
Low side output out of phase with
LIN
input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time, and programmable
up to 5us with one external R
DT
resistor (IR21084)
Lower di/dt gate driver for better noise immunity
(programmable up to 5uS for IR21084)
Description
The IR2108(4)(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
Packages
8-Lead SOIC
IR2108S
14-Lead SOIC
IR21084S
8-Lead PDIP
IR2108
14-Lead PDIP
IR21084
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
up to 600V
IR2108
V
CC
HIN
LIN
V
CC
HIN
LIN
DT
V
SS
R
DT
V
SS
HO
V
B
V
S
IR21084
TO
LOAD
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
COM
LO
www.irf.com
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