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IR2104SPBF Datasheet

  • IR2104SPBF

  • HALF-BRIDGE DRIVER

  • 137.75KB

  • 14頁(yè)

  • IRF

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Data Sheet No. PD60046-S
IR2104
(S) & (PbF)
HALF-BRIDGE DRIVER
Features
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Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Internally set deadtime
High side output in phase with input
Shut down input turns off both channels
Matched propagation delay for both channels
Also available LEAD-FREE
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Deadtime (typ.)
600V max.
130 mA / 270 mA
10 - 20V
680 & 150 ns
520 ns
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Packages
Description
The IR2104(S) are high voltage, high speed power
8 Lead SOIC
MOSFET and IGBT drivers with dependent high and low
8 Lead PDIP
IR2104S
side referenced output channels. Proprietary HVIC and
IR2104
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates from 10 to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
IN
SD
V
B
HO
V
S
LO
TO
LOAD
IN
SD
COM
(Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1

IR2104SPBF 產(chǎn)品屬性

  • 95

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān)

  • -

  • 半橋

  • 非反相

  • 680ns

  • 210mA

  • 1

  • 2

  • 600V

  • 10 V ~ 20 V

  • -40°C ~ 125°C

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 管件

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