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IR2101SPBF Datasheet

  • IR2101SPBF

  • HIGH AND LOW SIDE DRIVER

  • 132.46KB

  • 13頁

  • IRF

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Data Sheet No. PD60043-N
IR2101
(S)
IR2102
(S)
HIGH AND LOW SIDE DRIVER
Features
鈥?/div>
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V, and 15V logic input compatible
Matched propagation delay for both channels
Outputs in phase with inputs (IR2101) or out of
phase with inputs (IR2102)
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
600V max.
130 mA / 270 mA
10 - 20V
160 & 150 ns
50 ns
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Description
Packages
The IR2101(S)/IR2102(S) are high voltage, high
speed power MOSFET and IGBT drivers with inde-
pendent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS
technologies enable ruggedized monolithic con-
8 Lead SOIC
struction. The logic input is compatible with stan-
8 Lead PDIP
dard CMOS or LSTTL output, down to 3.3V logic. The
output drivers feature a high pulse current buffer
stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
up to 600V
V
CC
TO
LOAD
HIN
LIN
COM
IR2101
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
IR2102
www.irf.com
1

IR2101SPBF 產(chǎn)品屬性

  • 95

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動器 - 外部開關

  • -

  • 高端和低端，獨立

  • 非反相

  • 160ns

  • 210mA

  • 1

  • 2

  • 600V

  • 10 V ~ 20 V

  • -40°C ~ 125°C

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 管件

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