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IR062HD4C10U-P2 Datasheet

  • IR062HD4C10U-P2

  • HIGH VOLTAGE HALF BRIDGE

  • 7頁

  • IRF

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Preliminary Data Sheet No. PD60171-D
IR062HD4C10U-P2
IR082HD4C10U-P2
HIGH VOLTAGE HALF BRIDGE
Features
鈥?/div>
Output Power IGBT鈥檚 in half-bridge configuration
鈥?/div>
575V rated breakdown voltage
鈥?/div>
High side gate drive designed for bootstrap
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
operation
Matched propagation delay for both channels
Independent high and low side output channels
(IR062HD4C10U-P2) or cross-conduction
prevention logic (IR082HD4C10U-P2)
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
Metal heatsink back for improved PD
Product Summary
V
IN
(max)
P
D
(T
A
= 25
擄C
)
V
CE(ON)
typ
575V
3.0W
3.0V
Package
Description
The IR062HD4C10U-P2 / IR082HD4C10U-P2 are
high voltage, high speed half bridges. Proprietary
HVIC and latch immune CMOS technologies,
along with the power IGBT technology, enable
ruggedized single package construction. The
logic inputs are compatible with standard CMOS
or LSTTL outputs, down to 3.3V logic. The front-
end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two IGBT鈥檚 in a half-
bridge configuration. Propagation delays for the
high and low side power IGBT鈥檚 are matched to
simplify use. The device can operate up to 575 volts.
7 Pin
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