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IR02H420 Datasheet

  • IR02H420

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  • 6頁

  • ETC

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Data Sheet No. PD-6.076
IR02H420
HIGH VOLTAGE HALF-BRIDGE
Features
n
n
n
n
n
n
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Output Power MOSFETs in half-bridge configuration
500V Rated Breakdown Voltage
High side gate drive designed for bootstrap operation
Matched propagation delay for both channels
Independent high and low side output channels
Undervoltage lockout
5V Schmitt-triggered input logic
Half-Bridge output out of phase with HIN
Product Summary
V
IN
(max)
t
on/off
t
rr
R
DS(on)
P
D
(T
A
= 25 潞C)
500V
130 ns
270 ns
3.0鈩?/div>
鈩?/div>
2.0W
Description
The IR02H420 is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET
廬
power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compatible
with standard CMOS or LSTTL outputs. The front end
features an independent high and low side driver in
phase with the logic compatible input signals. The
output
features two HEXFETs in a half-bridge
configuration with a high pulse current buffer stage
designed for minimum cross-conduction in the half-
bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify use. The
device can operate up to 500 volts.
Package
IR02H420
9506
Typical Connection
U P
V IN
T O
5 0 0 V D C B U S
IR 0 2 H 4 2 0
V
C C
1
V
C C
V
B
6
H IN
2
H IN
9
V IN
L IN
3
L IN
7
V O
T O
4
C O M
L O A D
C O M

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