IPW50R140CP
CoolMOS
TM
Power Transistor
Features
鈥?Worldwide best
R
DS
,on
in TO220
鈥?Lowest figure of merit R
ON
x Q
g
鈥?Ultra low gate charge
鈥?Extreme dv/dt rated
鈥?High peak current capability
鈥?Pb-free lead plating; RoHS compliant
鈥?Quailfied according to JEDEC
1)
for target applications
CoolMOS CP is designed for:
鈥?Hard & soft switching SMPS topologies
鈥?CCM PFC for ATX, Notebookadapter & PDP and LCD TV
鈥?PWM for ATX, Notebook adapter, PDP and LCD TV
Type
IPW50R140CP
Package
PG-TO247
Marking
5R140P
Product Summary
V
DS
@T
jmax
R
DS(on),max
Q
g,typ
550
0.140
48
V
鈩?/div>
nC
PG-TO247
Maximum ratings,
at
T
j
=25 擄C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 擄C
T
C
=100 擄C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR2),3)
Avalanche current, repetitive
t
AR2),3)
MOSFET dv /dt ruggedness
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
V
GS
V
DS
=0...400 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
P
tot
T
j
,
T
stg
M3 and M3.5 screws
T
C
=25 擄C
T
C
=25 擄C
I
D
=9.3 A,
V
DD
=50 V
I
D
=9.3 A,
V
DD
=50 V
Value
23
15
56
616
0.93
9.3
50
鹵20
鹵30
192
-55 ... 150
60
W
擄C
Ncm
A
V/ns
V
mJ
Unit
A
Rev. 1.01
page 1
2007-02-06
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