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IPP04N03LA Datasheet

  • IPP04N03LA

  • OptiMOS 2 Power-Transistor

  • 10頁

  • INFINEON   INFINEON

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IPB04N03LA
IPI04N03LA, IPP04N03LA
OptiMOS
2 Power-Transistor
Features
鈥?Ideal for high-frequency dc/dc converters
鈥?N-channel
鈥?Logic level
鈥?Excellent gate charge x
R
DS(on)
product (FOM)
鈥?Very low on-resistance
R
DS(on)
鈥?Superior thermal resistance
鈥?175 擄C operating temperature
鈥?dv /dt rated
P-TO263-3-2
廬
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
25
3.9
80
V
m鈩?/div>
A
P-TO262-3-1
P-TO220-3-1
Type
IPB04N03LA
IPI04N03LA
IPP04N03LA
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code
Q67042-S4181
Q67042-S4183
Q67042-S4182
Marking
04N03LA
04N03LA
04N03LA
Maximum ratings,
at
T
j
=25 擄C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 擄C
1)
T
C
=100 擄C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 擄C
T
C
=25 擄C
2)
I
D
=77 A,
R
GS
=25
鈩?/div>
I
D
=80 A,
V
DS
=20 V,
di /dt =200 A/碌s,
T
j,max
=175 擄C
Value
80
80
385
290
6
鹵20
107
-55 ... 175
55/175/56
mJ
kV/碌s
V
W
擄C
Unit
A
Rev. 1.3
page 1
2003-12-18

IPP04N03LA 產(chǎn)品屬性

  • Infineon

  • MOSFET

  • N-Channel

  • 25 V

  • +/- 20 V

  • 80 A

  • 6.7 m Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220AB

  • Tube

  • 5.4 ns

  • 85 S / 43 S

  • - 55 C

  • 107 W

  • 4.5 ns

  • 500

  • 38 ns

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