鈩?/div>
at higher
frequencies. This provides a
matching advantage for IF
circuits, as well as improved
power efficiency, making it
suitable for battery powered
designs.
The INA-30311 is fabricated using
HP鈥檚 30 GHz f
MAX
ISOSAT
TM
Silicon bipolar process which
uses nitride self-alignment sub-
micrometer lithography, trench
isolation, ion implantation, gold
metallization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
Applications
鈥?LNA or IF Amplifier for
Cellular, Cordless, Special
Mobile Radio, PCS, ISM, and
Wireless LAN Applications
Pin Connections and
Package Marking
INPUT
GND
N30
V
CC
RF
OUTPUT
V
CC
OUTPUT
Equivalent Circuit (Simplified)
RF
INPUT
GROUND
5963-6679E
6-140