鈩?/div>
Gain Block
鈥?Low Noise Figure:
2.5 dB Typical at 1.5 GHz
鈥?High Gain:
26.0 dB Typical at 2.8 GHz
鈥?3 dB Bandwidth:
DC to 2.8 GHz
鈥?Unconditionally Stable
(k>1)
鈥?Low Power Consumption
require high gain and low noise IF
or RF amplification with minimum
power consumption.
The INA series of MMICs is
fabricated using HP鈥檚 10 GHz f
T
,
25 GHz f
MAX
, ISOSAT鈩?I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
The recommended assembly
procedure is gold-eutectic die
attach at 400擄C and either wedge
or ball bonding using 0.7 mil gold
wire.
[1]
Chip Outline
[1]
C
M
7891 KA
RF
OUT
(3)
GND
2
(2)
(4)
Description
The INA-03100 is a low-noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
feedback amplifier chip. It is
designed for narrow or wide
bandwidth commercial, industrial
and military applications that
30AN
(1)
RF
IN
GND
1
Note:
1. See Application Note, 鈥淎005: Transistor
Chip Use鈥?for additional information.
Typical Biasing Configuration
V
CC
RFC (Optional)
R
bias
C
block
RF IN
1
2
4
3
V
d
= 5.5 V
(Nominal)
C
block
RF OUT
5965-9676E
6-102