IMX9
Transistors
General purpose transistor
(isolated dual transistors)
IMX9
Features
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Units : mm)
2.9鹵0.2
1.9鹵0.2
0.95 0.95
(4)
(5)
(6)
1.1
+0.2
鈭?.1
0.8鹵0.1
+0.2
鈭?.1
2.8鹵0.2
0~0.1
Structure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
1
and Tr
2
.
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: X9
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
25
20
12
500
300(TOTAL)
150
鈭?5~+150
Unit
V
V
V
mA
mW
擄C
擄C
Equivalent circuit
(4)
(5)
(6)
Tr
1
Tr
2
鈭?/div>
(3)
(2)
(1)
鈭?/div>
200mW per element must not be exceeded.
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Ron
Min.
25
20
12
鈭?/div>
鈭?/div>
鈭?/div>
560
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
0.18
鈭?/div>
350
8
0.8
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
0.4
2700
鈭?/div>
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
鈭?/div>
MHz
pF
鈩?/div>
I
C
=10碌A(chǔ)
I
C
=1mA
I
E
=10碌A(chǔ)
V
CB
=20V
V
EB
=10V
I
C
/I
B
=500mA/20mA
V
CE
=3V,
I
C
=10mA
V
CE
=10V,
I
E
=鈭?0mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
I
B
=1mA,
V
i
=100mVrms,
f=1kHz
Conditions
0.3~0.6
(2) (1)
+0.1
+0.1
0.15
鈭?.06
0.3
鈭?.05
All terminals have same dimensions
(3)
1.6
IMX9相關(guān)型號PDF文件下載
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英文版
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