IMT4
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
路
路
路
Epitaxial Planar Die Construction
Complementary NPN Type Available
(IMX8)
Small Surface Mount Package
SOT-26
A
B
2
B
1
E
1
NEW PRODUCT
Dim
A
B
B C
C
1
Min
0.35
1.50
2.70
戮
戮
2.90
1.00
0.35
0.10
Max
0.50
1.70
3.00
戮
戮
3.10
1.30
0.55
0.20
Typ
0.38
1.60
2.80
0.95
0.55
3.00
0.05
1.10
0.40
0.15
KX7
Mechanical Data
路
路
路
路
路
路
Case: SOT-26, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: KX7
Weight: 0.016 grams (approx.)
C
2
E
2
C
D
F
H
M
H
K
J
K
L
M
0.013 0.10
J
D
F
L
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
IMT4
-120
-120
-5.0
-50
225
555
-55 to +150
Unit
V
V
V
mA
mW
擄C/W
擄C
Characteristic
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
@ T
A
= 25擄C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
Min
-120
-120
-5.0
戮
戮
180
戮
戮
Typ
戮
戮
戮
戮
戮
戮
戮
Max
戮
戮
戮
-0.5
-0.5
820
-0.5
Unit
V
V
V
mA
mA
戮
V
Test Condition
I
C
= -50mA
I
C
= -1.0mA
I
E
= -50mA
V
CB
= -100V
V
EB
= -4.0V
I
C
= -2.0mA, V
CE
= -6.0V
I
C
= -10mA, I
B
= -1.0mA
V
CE
= -12V, I
E
= 2.0mA,
f = 100MHz
f
T
(Note 3)
140
戮
MHz
Ordering Information
Device
IMT4-7
Notes:
Packaging
SOT-26
Shipping
3000/Tape & Reel
1.Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30303 Rev. A-2
1 of 2
IMT4
1
2
