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IMH23 Datasheet

  • IMH23

  • Dual digital transistors

  • 3頁

  • ROHM

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IMH23
Transistors
Dual digital transistors
IMH23
Features
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
V
CE (sat)
=40mV at I
C
/ I
B
=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
I
C
=600mA.
3) Two DTC643T chips in a SMT package.
External dimensions
(Unit : mm)
SMT6
0.3
0.95
(6)
(1)
(4)
(3)
1.6
2.8
0.15
1pin mark
0.95
(5)
(2)
0.3Min.
Each lead has same dimensions
Structure
NPN digital transistor
(Built-in resistor type)
Abbreviated symbol : H23
Equivalent circuit
(4)
(5)
(6)
R
1
R
1
R
1
=4.7k鈩?/div>
(3)
(2)
(1)
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
20
20
12
600
300(TOTAL)
150
鈭?5
to
+150
Unit
V
V
V
mA
mW
擄C
擄C
鈭?/div>
鈭?/div>
200mW per element must not be a exceeded.
0.8
1.1
1.9
2.9
1/2

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