鈥?/div>
This is a Pb鈭扚ree Device
MAXIMUM RATINGS
(T
A
= 25擄C)
Rating
Collector鈭払ase Voltage
Collector鈭扙mitter Voltage
Emitter鈭払ase Voltage
Collector Current 鈭?Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
30
15
5.0
600
Unit
Vdc
Vdc
Vdc
mAdc
(3)
Max
300
150
鈭?5 to +150
Unit
mW
擄C
擄C
SC鈭?4
(1)
Q2
R1
Q
1
(2)
(5)
R1
(4)
http://onsemi.com
(6)
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation*
Junction Temperature
Storage Temperature
*Total for both Transistors.
6
Symbol
P
D
T
J
T
stg
MARKING
DIAGRAM
Q1 + Q2: NPN
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Collector鈭扙mitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Collector鈭払ase Breakdown Voltage
(I
C
= 50
mAdc,
I
E
= 0)
Emitter鈭払ase Breakdown Voltage
(I
E
= 50
mAdc,
I
C
= 0)
Collector鈭払ase Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
Emitter鈭払ase Cutoff Current
(V
EB
= 4.0 V, I
C
= 0)
DC Current Gain (Note 1)
(V
CE
= 5.0 Vdc, I
C
= 50 mAdc)
Collector鈭扙mitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 2.5 mAdc)
Input Resistance
1. Pulse Test: Pulse Width
鈮?/div>
300
ms,
D.C.
鈮?/div>
2%.
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
Min
15
30
5.0
鈭?/div>
鈭?/div>
100
鈭?/div>
1.54
Max
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
600
80
2.86
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
鈭?/div>
mV
kW
1
SC鈭?4R
318AA
Style 21
H20 = Specific Device Code
M = Date Code
H20 M
ORDERING INFORMATION
Device
IMH20TR1G
Package
SC鈭?4R
Shipping
鈥?/div>
3000/Tape & Reel
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
漏
Semiconductor Components Industries, LLC, 2004
January, 2004 鈭?Rev. 0
Publication Order Number:
IMH20TR1G/D
IMH20TR1G 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 陣列﹐預(yù)偏壓式
-
2 個 NPN 預(yù)偏壓式（雙）
600mA
15V
2.2k
-
100 @ 50mA，5V
80mV @ 2.5mA，50mA
-
-
300mW
表面貼裝
SC-74，SOT-457
SC-74R
帶卷 (TR)
IMH20TR1G相關(guān)型號PDF文件下載
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