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IMBD4448 Datasheet

  • IMBD4448

  • Small Signal Diodes

  • 4頁

  • VISHAY   VISHAY

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IMBD4448
Small Signal Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
FEATURES
鈾?/div>
Silicon Epitaxial Planar Diodes
Top View
.056 (1.43
)
.052 (1.33
)
鈾?/div>
Fast switching diode in case SOT-23,
especially suited for automatic insertion.
鈾?/div>
This diode is also available in other case
styles including: the DO-35 case with the
type designation 1N4448, the Mini-MELF case with
the type designation LL4448, and the SOD-123 case
with the type designation 1N4448W
.045 (1.15)
.037 (0.95)
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Dimensions in inches and (millimeters)
Marking
A3
3
Top View
1
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 擄C ambient temperature unless otherwise specified
Symbol
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 擄C and
鈮?/div>
f
鈮?/div>
50 Hz
Surge Forward Current at t < 1 s and T
j
= 25 擄C
Power Dissipation at T
amb
= 25 擄C
Junction Temperature
Storage Temperature Range
1)
Value
75
100
150
1)
Unit
V
V
mA
V
R
V
RM
I
0
I
FSM
P
tot
T
j
T
S
500
350
1)
150
鈥?5 to +150
mA
mW
擄C
擄C
Device on fiberglass substrate, see layout
4/98

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