EMB11 / UMB11N / IMB11A
Transistors
General purpose
(dual digital transistors)
EMB11 / UMB11N / IMB11A
Features
1) Two DTA114E chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMB11
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : B11
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
(3)
UMB11N
0.2
0.5
0.5 0.5
1.0
1.6
(6)
1.25
2.1
0.1Min.
0to0.1
The following characteristics apply to both DTr
1
and
DTr
2
.
0.15
(1)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Equivalent circuit
EMB11 / UMB11N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=10k鈩?/div>
R
2
=10k鈩?/div>
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
Abbreviated symbol : B11
IMB11A
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=10k鈩?/div>
R
2
=10k鈩?/div>
(1)
IMB11A
(6)
0.3
(4)
(5)
1.6
2.8
0.15
(6)
0.3to0.6
0to0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
鈭?0
鈭?0
10
Output current
EMB11, UMB11N
Power
dissipation IMB11A
Junction temperature
Storage temperature
鈭?0
鈭?00
150 (TOTAL)
300 (TOTAL)
150
鈭?5
to
+150
藲C
藲C
Unit
V
V
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : B11
mA
鈭?/div>
1
鈭?/div>
2
mW
鈭?/div>
1 120mW per element must not be exceeded.
鈭?/div>
2 200mW per element must not be exceeded.
(3)
(2)
(1)
0.7
0.9
2.0
(5)
(2)
Rev.A
1/2
IMB11A 產(chǎn)品屬性
1
10 k
表面貼裝
1.6mm
SMT
2.9 x 1.6 x 1.1mm
6
PNP
-55 °C
100 mA
30
+150 °C
雙
2.9mm
1.1mm
IMB11A相關(guān)型號(hào)PDF文件下載
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