ILD620/620GB
QUAD CHANNEL
ILQ620/620GB
DUAL CHANNEL
AC INPUT PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
鈥?Identical Channel to Channel Footprint
ILD620 Crosses to TLP620-2
ILQ620 Crosses to TLP620-4
鈥?Current Transfer Ratio (CTR) at I
F
=
鹵
5 mA
ILD/Q620: 50% Min.
ILD/Q620GB: 100% Min.
鈥?Saturated Current Transfer Ratio (CTR
SAT
)
at I
F
=
鹵
1 mA
ILD/Q620: 60% Typ.
ILD/Q620GB: 30% Min.
鈥?High Collector-Emitter Voltage, BV
CEO
=70 V
鈥?Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
鈥?Field-Effect Stable by TRIOS
(TR
ansparent
IO
n
S
hield
)
鈥?Isolation Test Voltage from Double Molded
Package
鈥?Underwriters Lab File #E52744
鈥?VDE 0884 Available with Option 1
Maximum Ratings
(Each Channel)
Emitter
Forward Current .........................................
鹵
60 mA
Surge Current...............................................
鹵
1.5 A
Power Dissipation ...................................... 100 mW
Derate from 25
擄
C .................................. 1.3 mW/
擄
C
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current.......................................... 50 mA
Collector Current (t <1 ms) ......................... 100 mA
Power Dissipation ...................................... 150 mW
Derate from 25
擄
C ..................................... 2 mW/
擄
C
Package
Isolation Test Voltage(t=1 sec.)......... 5300 VAC
RMS
Package Dissipation, ILD620/GB ............. 400 mW
Derate from 25
擄
C ............................... 5.33 mW/
擄
C
Package Dissipation, ILQ620/GB ............. 500 mW
Derate from 25
擄
C ............................... 6.67 mW/
擄
C
Creepage ................................................7 mm min.
Clearance ...............................................7 mm min.
Isolation Resistance
V
IO
=500 V, T
A
=25
擄
C ................................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V, T
A
=100
擄
C .............................
鈮?/div>
10
11
鈩?/div>
Storage Temperature .................. 鈥?5
擄
C to +150
擄
C
Operating Temperature............... 鈥?5
擄
C to +100
擄
C
Junction Temperature ................................... 100
擄
C
Soldering Temperature
(2 mm from case bottom).......................... 260
擄
C
4擄 Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
Dimensions in inches (mm)
Pin One I.D.
4
3
2
1
K=Cathode
1
2
3
4
8 Collector
7 Emitter
6 Collector
5 Emitter
A/K
.268 (6.81)
.255 (6.48)
5
6
7
8
A/K
A/K
.390 (9.91)
.379 (9.63)
A/K
.045 (1.14) .150 (3.81)
.030 (.76) .130 (3.30)
.305 Typ.
(7.75) Typ.
.135 (3.43)
.115 (2.92)
4擄 Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
10
擄
Typ.
3擄鈥?擄
.012 (.30)
.008 (.20)
K=Cathode
A/K
1
16 Collector
15 Emitter
14 Collector
13 Emitter
12 Collector
11 Emitter
10 Collector
9 Emitter
2
Pin One I.D.
A/K
A/K
A/K
3
4
5
6
7
8
.268 (6.81)
.255 (6.48)
A/K
A/K
A/K
A/K
.150 (3.81)
.130 (3.30)
.305 Typ.
(7.75) Typ.
.135 (3.43)
.115 (2.92)
10
擄
Typ.
3擄鈥?擄
.012 (.30)
.008 (.20)
DESCRIPTION
The ILD/Q620 and ILD/Q620GB are multi-channel input phototran-sistor
optocouplers that use inverse parallel GaAs IRLED emitters and high gain
NPN silicon phototransistors per channel. These devices are constructed
using over/under leadframe optical coupling and double molded insulation
resulting in a Withstand Test Voltage of 7500 VAC
PEAK
.
The LED parameters and the linear CTR characteristics combined with the
TRIOS 鏗乪ld-effect process make these devices well suited for AC voltage
detection. The ILD/Q620GB with its low IF guaranteed CTR
CEsat
minimizes
power dissipation of the AC voltage detection network that is placed in
series with the LEDs. Eliminating the phototransistor base connection pro-
vides added electrical noise immunity from the transients found in many
industrial control environments.
5鈥?
1
2
3
4
