鈥?/div>
V
VDE #0884 Available with Option 11
D E
Dimensions in inches (mm)
Pin One I.D.
4
3
2
1
Anode
1
Cathode
2
Anode
3
8
Emitter
7
Collector
6
Emitter
5
Collector
.268 (6.81)
.255 (6.48)
5
6
7
8
Cathode
4
.390 (9.91)
.379 (9.63)
.045 (1.14) .150 (3.81)
.030 (.76)
.130 (3.30)
.305 Typ.
(7.75) Typ.
.135 (3.43)
.115 (2.92)
10擄 Typ.
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
3擄鈥?擄
.012 (.30)
.008 (.20)
DESCRIPTION
The ILD610 Series is a dual channel optocoupler
series for high density applications. Each channel
consists of an optically coupled pair with a Gallium
Arsenide infrared LED and a silicon NPN pho-
totransistor. Signal information, including a DC
level, can be transmitted by the device while main-
taining a high degree of electrical isolation between
input and output. The ILD610 Series is the dual ver-
sion of SFH610 Series and uses a repetitive pin-out
con鏗乬uration instead of the more common alternat-
ing pin-out used in most dual couplers.
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage .................................................6 V
Surge Forward Current (t 攏10 ms)...................1.5 A
Total Power Dissipation ..............................100 mW
Derate Linearly from 25
擄
C......................1.3 mW/
擄
C
DC Forward Current ......................................60 mA
Detector
Collector-Emitter Voltage..................................70 V
Collector Current ..........................................50 mA
Collector Current (t
鈮?/div>
1 ms) ..........................100 mA
Total Power Dissipation ..............................150 mW
Derate Linearly from 25
擄
C......................2.0 mW/
擄
C
Package
Isolation Test Voltage (t=1 sec.) ........ 5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
擄
C ...............................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V, T
A
=100
擄
C .............................
鈮?/div>
10
11
鈩?/div>
Storage Temperature ...................鈥?5
擄
C to +150
擄
C
Operating Temperature ...............鈥?5
擄
C to +100
擄
C
Junction Temperature ................................... 100
擄
C
Lead Soldering Time at 260
擄
C .................... 10 sec.
4擄 Typ.
.022 (.56)
.018 (.46)
Electrical Characteristics
(T
A
=25
擄
C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter Dark
Current
Capacitance
Package
Collector-Emitter Saturation
Voltage
Coupling Capacitance
V
CEsat
C
C
0.25
(
鈮?/div>
0.40)
0.35
V
pF
I
F
=10 mA,
I
C
=2.5 mA
BV
CEO
BV
CEO
I
CEO
C
CE
90 (
鈮?/div>
70)
7.0 (
鈮?/div>
6.0)
2 (
鈮?/div>
50)
7
V
V
nA
pF
I
C
=10
碌
A
I
E
=10
碌
A
V
CE
=10 V
V
CE
=5 V,
f=1 MHz
V
F
I
R
C
O
1.25
(
鈮?/div>
1.65)
0.01 (
鈮?/div>
10)
25
V
碌
A
pF
I
F
=60mA
V
R
=6V
V
R
=0 V,
f=1 MHz
Typ.
Unit
Condition
5鈥?
next
ILD610-2 產(chǎn)品屬性
Vishay
晶體管輸出光電耦合器
2 Channel
DC
70 V
0.4 V
5300 Vrms
125 %
1.65 V
100 mA
150 mW
+ 100 C
- 55 C
PDIP-8
Tube
60 mA
6 V
Phototransistor
DC
2000
ILD610-2相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
下載
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