ILD256T
Dual AC Input Phototransistor
Small Outline
Surface Mount Optocoupler
FEATURES
鈥?Each Channel: Guaranteed CTR Symmetry,
2:1 Maximum
鈥?Bidirectional AC Input
鈥?Industry Standard SOIC-8 Surface Mount-
able Package
鈥?Standard Lead Spacing, .05"
鈥?Available only on Tape and Reel Option
(Conforms to EIA Standard 481-2)
DESCRIPTION
The ILD256T is a dual channel optocoupler. Each
channel consists of two infrared emitters con-
nected in anti-parallel and coupled to a silicon
NPN phototransistor detector.
These circuit elements are constructed with a
standard SOIC-8A footprint.
The product is well suited for telecom applica-
tions such as ring detection or off/on hook status,
given its bidirectional LED input and guaranteed
current transfer ratio (CTR) of 20% at
I
F
= 10 mA.
Maximum Ratings
Emitter
(Each Channel)
Continuous Forward Current.......................30 mA
Power Dissipation at 25擄C ......................... 50 mW
Derate Linearly from 25擄C..................0.66 mW/擄C
Detector
(Each Channel)
Collector-Emitter Breakdown Voltage ............ 70 V
Emitter-Collector Breakdown Voltage ........... 7.0 V
Power Dissipation ................................... 125 mW
Derate Linearly from 25擄C..................1.67 mW/擄C
Package
Total Package Dissipation at 25擄C Ambient
(LED + Detector) .................................. 300 mW
Derate Linearly from 25擄C....................4.0 mW/擄C
Storage Temperature ................ 鈥?5擄C to +150擄C
Operating Temperature .............鈥?5擄C to +100擄C
Soldering Time at 260擄C ........................... 10 sec.
Dimensions in inches (mm)
.120鹵.002
(3.05鹵.05)
A/K 1
.240
(6.10)
K/A 2
C .154鹵.002
L
(3.91鹵.05) A/K 3
K/A 4
.016 (.41)
.015鹵.002
(.38鹵.05)
40擄
7擄
.0585鹵.002
(1.49鹵.05)
.125鹵.002
(3.18鹵.05)
8 C
7 E
6 C
5 E
Pin One I.D.
.230鹵.002
(5.84鹵.05)
.004 (.10)
.008 (.20)
.008 (.20)
.050(1.27) Typ.
5擄Max.
.040 (1.02)
.020鹵.004
(.51鹵.10)
2 Plcs.
R.010
Lead coplanarity
(.25) Max.
鹵.001
Max.
Table 1. Characteristics
T
A
=25
擄
C
Sym.
Emitter (Each Channel)
Forward Voltage
Reverse Current
Min.
Typ.
Max.
Unit
Condition
V
F
I
R
鈥?/div>
鈥?/div>
1.2
0.1
1.55
100
V
mA
I
F
=
鹵
10 mA
V
R
=6.0 V
I
C
=10
碌
A
I
E
=10
碌
A
Detector (Each Channel)
Breakdown Voltage
BV
CEO
BV
ECO
Leakage Current,
Collector-Emitter
Package
DC Current Transfer
Symmetry
CTR at + 10 mA
CTR
鈥?/div>
20
0.5
鈥?/div>
1.0
鈥?/div>
2.0
%
鈥?/div>
70
7.0
鈥?/div>
鈥?/div>
鈥?/div>
5.0
鈥?/div>
鈥?/div>
50
V
V
nA
I
CEO
V
CE
=10 V
I
F
=
鹵
10 mA
V
CE
=5.0 V
鈥?/div>
CTR at -10 mA
Saturation Voltage,
Collector-Emitter
Isolation Voltage,
Input to Output
V
CEsat
V
IO
鈥?/div>
3000
鈥?/div>
鈥?/div>
0.4
鈥?/div>
鈥?/div>
V
RMS
I
F
=
鹵
16 mA
I
C
=2.0 mA
t=1.0 sec.
錚?/div>
2000 In鏗乶eon Technologies Corp. 鈥?Optoelectronics Division 鈥?San Jose, CA
www.in鏗乶eon.com/opto 鈥?1-888-In鏗乶eon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG 鈥?Regensburg, Germany
www.osram-os.com 鈥?+49-941-202-7178
1
April 3, 2000-19
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