ILD223
DUAL PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
鈥?Two Channel Optocoupler
鈥?High Current Transfer Ratio at I
F
=1 mA,
500% Min.
鈥?Isolation Test Voltage, 2500 VRMS
鈥?Electrical Speci鏗乧ations Similar to Standard
6-pin Coupler
鈥?Compatible with Dual Wave, Vapor Phase and
IR Re鏗俹w Soldering
鈥?Industry Standard SOIC-8 Surface Mountable
Package
鈥?Standard Lead Spacing, .05"
鈥?Available in Tape and Reel Option (Conforms
to EIA Standard 481-2)
鈥?Underwriters Lab File #E52744
DESCRIPTION
The ILD223 is a high current transfer ratio (CTR)
optocoupler. It has a Gallium Arsenide infrared LED
emitter and a silicon NPN photodarlington transis-
tor detector.
This device has CTRs tested at an LED current of
1 mA. This low drive current permits easy interfac-
ing from CMOS to LSTTL or TTL.
The ILD223 is constructed in a standard SOIC-8
foot print which makes it ideally suited for high den-
sity applications. In addition to eliminating through-
holes requirements, this package conforms to stan-
dards for surface mounted devices.
Maximum Ratings
(Each Channel)
Emitter
Peak Reverse Voltage .....................................6.0 V
Peak Pulsed Current (1
碌
s, 300 pps) .................3 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25
擄
C............................45 mW
Derate Linearly from 25
擄
C......................0.4 mW/
擄
C
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................5 V
Power Dissipation per Channel................... 75 mW
Derate Linearly from 25
擄
C......................3.1 mW/
擄
C
Package
Total Package Dissipation at 25
擄
C Ambient
(2 LEDs + 2 Detectors, 2 Channels).......240 mW
Derate Linearly from 25
擄
C.........................2 mW/
擄
C
Storage Temperature ...................鈥?5
擄
C to +150
擄
C
Operating Temperature ............... 鈥?5
擄
C to +100
擄
C
Soldering Time at 260
擄
C ............................. 10 sec.
Dimensions in inches (mm)
Pin 1
.120鹵.005
(3.05鹵.13)
.240
(6.10)
.154鹵.005
C
L (3.91鹵.13)
.016 (.41)
.192鹵.005
(4.88鹵.13)
.004 (.10)
.008 (.20)
.050 (1.27) Typ.
.040 (1.02)
.015鹵.002
(.38鹵.05)
.008 (.20)
40擄
7擄
.058鹵.005
(1.49鹵.13)
.125鹵.005
(3.18鹵.13)
Lead
Coplanarity
鹵.001
(.04)
Max.
Anode 1
Cathode 2
Anode 3
Cathode 4
8 Collector
7 Emitter
6 Collector
5 Emitter
5擄 Max.
R.010
(.25) Max.
.020鹵.004
(.15鹵.10)
2 Plcs.
Characteristics
(T
A
=25
擄
C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown
Voltage
Collector-Emitter
Emitter-Collector
Current,
Collector-Emitter
Capacitance,
Collector-Emitter
Package
DC Current
Transfer Ratio
Saturation
Voltage,
Collector-Emitter
Capacitance,
Input to Output
Resistance,
Input to Output
Turn-On Time
Turn-Off Time
Isolation Test
Voltage
CTR
DC
V
CEsat
500
1
%
V
I
F
=1 mA,
V
CE
=5 V
I
F
=1 mA,
I
CE
=0.5 mA
V
F
I
R
C
O
0.1
25
1.3
100
V
碌
A
pF
I
F
=1 mA
V
R
=6.0 V
V
F
=0 V,
F=1 MHz
Min.
Typ.
Max.
Unit
Condition
BV
CEO
BV
ECO
I
CEO
C
CE
30
5
50
3.4
V
V
nA
pF
I
C
=10 mA
I
E
=10 mA
V
CE
=5 V,
I
F
=0
V
CE
=5 V
C
IO
0.5
pF
R
IO
t
ON
t
OFF
V
IO
100
15
30
G
鈩?/div>
碌
s
碌
s
V
CC
=10 V
R
L
=100
鈩?/div>
I
F
=5 mA
(t=1 min.)
2500 VAC
RMS
5鈥?
INFINEON
1
2
