ILD223T
Dual Photodarlington
Small Outline Surface Mount Optocoupler
FEATURES
鈥?Two Channel Optocoupler
鈥?High Current Transfer Ratio at
I
F
=1.0 mA,
500% Min.
鈥?Isolation Test Voltage, 3000 V
RMS
鈥?Electrical Speci鏗乧ations Similar to Standard
6-pin Coupler
鈥?Compatible with Dual Wave, Vapor Phase and
IR Re鏗俹w Soldering
鈥?SOIC-8 Surface Mountable Package
鈥?Standard Lead Spacing, .05"
鈥?Available only on Tape and Reel Option (Con-
forms to EIA Standard 481-2)
鈥?Underwriters Lab File #E52744
DESCRIPTION
The ILD223T is a high current transfer ratio (CTR)
optocoupler. It has a Gallium Arsenide infrared LED
emitter and a silicon NPN photodarlington transis-
tor detector.
This device has CTRs tested at an LED current of
1.0 mA. This low drive current permits easy inter-
facing from CMOS to LSTTL or TTL.
The ILD223T is constructed in a standard SOIC-8A
foot print which makes it ideally suited for high den-
sity applications. In addition to eliminating through-
holes requirements, this package conforms to stan-
dards for surface mounted devices.
Maximum Ratings
(Each Channel)
Emitter
Peak Reverse Voltage ..................................... 6.0 V
Peak Pulsed Current (1.0
碌
s, 300 pps) ........... 3.0 A
Continuous Forward Current per Channel .... 30 mA
Power Dissipation at 25
擄
C............................ 45 mW
Derate Linearly from 25
擄
C ...................... 0.4 mW/
擄
C
Detector
Collector-Emitter Breakdown Voltage............... 30 V
Emitter-Collector Breakdown Voltage.............. 5.0 V
Power Dissipation per Channel .................... 75 mW
Derate Linearly from 25
擄
C ...................... 3.1 mW/
擄
C
Package
Total Package Dissipation at 25
擄
C Ambient
(2 LEDs + 2 Detectors, 2 Channels)....... 240 mW
Derate Linearly from 25
擄
C ...................... 2.0 mW/
擄
C
Storage Temperature ................... 鈥?5
擄
C to +150
擄
C
Operating Temperature ................ 鈥?5
擄
C to +100
擄
C
Soldering Time at 260
擄
C ...............................10 sec
.
Dimensions in inches (mm)
Pin 1
.120鹵.002
(3.05鹵.05)
.240
(6.10)
C .154鹵.002
L
(3.91鹵.05)
Anode 1
Cathode 2
Anode 3
Cathode 4
.016 (.41)
.230鹵.002
(5.84鹵.05)
.015鹵.002
(.38鹵.05)
40擄
7擄
.058
(1.49)
.125 (3.18)
Lead
Coplanarity
鹵.001
(.04)
max.
8 Collector
7 Emitter
6 Collector
5 Emitter
.004 (.10)
.008 (.20)
.050 (1.27) typ.
.040 (1.02)
.008 (.20)
5擄 max.
R.010
(.25) max.
.020鹵.004
(.5鹵.10)
2 plcs.
Table 1. Characteristics
T
A
=25
擄
C
Parameter
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown
Voltage
Current,
Collector-Emitter
Capacitance,
Collector-Emitter
Package
DC Current
Transfer Ratio
Saturation
Voltage,
Collector-Emitter
Capacitance,
Input to Output
Resistance,
Input to Output
Turn-On Time
Turn-Off Time
Isolation Test
Voltage
CTR
DC
V
CEsat
500
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
%
V
I
F
=1.0 mA,
V
CE
=5.0 V
I
F
=1.0 mA,
I
CE
=0.5 mA
鈥?/div>
鈥?/div>
V
CC
=10 V
R
L
=100
鈩?/div>
I
F
=5.0 mA
t=1.0 sec.
www.vishay.com
2鈥?83
Symbol
Min.
Typ.
Max.
Unit
Condition
V
F
I
R
C
O
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
25
1.3
100
鈥?/div>
V
碌
A
pF
I
F
=1.0 mA
V
R
=6.0 V
V
F
=0 V
F=1.0 MHz
BV
CEO
BV
ECO
I
CEO
C
CE
30
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3.4
鈥?/div>
鈥?/div>
50
鈥?/div>
V
I
C
=10
碌
A
I
E
=10
碌
A
V
CE
=5.0 V
I
F
=0
V
CE
=5.0 V
nA
pF
C
IO
R
IO
t
ON
t
OFF
V
IO
0.5
100
15
30
3000
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
pF
G
鈩?/div>
碌
s
碌
s
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
RMS
Document Number: 83648
Revision 17-August-01
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