鈥?Leakage Current, 1 nA Typ.
鈥?/div>
VDE 0884 Available with Option1
D E
Dimensions in inches (mm)
Pin One I.D.
4
3
2
1
Anode
1
.268 (6.81)
.255 (6.48)
5
6
7
8
8
Emitter
7
Collector
6
Collector
5
Emitter
Cathode
2
Cathode
3
Anode
4
.305 Typ.
(7.75) Typ.
DESCRIPTION
The ILCT6 is a two channel opto isolator for high
density applications. Each channel consists of an
optically coupled pair with a gallium arsenide infra-
red LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmit-
ted by the device while maintaining a high degree
of electrical isolation between input and output.
.390 (9.91)
.379 (9.63)
.045 (1.14) .150 (3.81)
.030 (.76) .130 (3.30)
4擄 Typ.
.135 (3.43)
.115 (2.92)
10擄 Typ.
3擄鈥?擄
.012 (.30)
.008 (.20)
.040 (1.02)
The ILCT6 is especially designed for driving
.022 (.56)
.030 (.76 )
medium-speed logic, where it may be used to elimi-
.018 (.46)
.100 (2.54) Typ.
nate troublesome ground loop and noise problems.
It can also be used to replace relays and transform-
ers in many digital interface applications, as well as
Electrical Characteristics
(T
A
=25
擄
C)
analog applications such as CRT modulation.
Sym-
Min.
Typ.
Max.
Unit
Condition
Maximum Ratings
Emitter (each channel)
Rated Forward Current, DC...........................60 mA
Peak Forward Current, DC
(1
碌
s pulse, 300 pps)......................................3 A
Power Dissipation at 25
擄
C Ambient ...........100 mW
Derate Linearly from 25
擄
C......................1.3 mW/
擄
C
Detector (each channel)
Collector Current ...........................................30 mA
Collector-Emitter Breakdown Voltage...............30 V
Power Dissipation at 25
擄
C Ambient ...........150 mW
Derate Linearly from 25
擄
C.........................2 mW/
擄
C
Package
Isolation Test Voltage......................... 5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
擄
C ...............................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V, T
A
=100
擄
C .............................
鈮?/div>
10
11
鈩?/div>
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Total Package Dissipation
at 25
擄
C Ambient. ...................................400 mW
Derate Linearly from 25
擄
C....................5.33 mW/
擄
C
Storage Temperature ...................鈥?5
擄
C to +150
擄
C
Operating Temperature ...............鈥?5
擄
C to +100
擄
C
Lead Soldering Time at 260
擄
C ................... 10 sec.
Emitter
Forward Voltage
Reverse Current
Junction
Capacitance
Detector
Breakdown Voltage,
Collector-Emitter
Emitter-Collector
Leakage Current,
Collector -Emitter
Capacitance
Collector-Emitter
Package
DC Current
Transfer Ratio
Saturation Voltage,
Collector-Emitter
Isolation
Capacitance
Capacitance
between Channels
Bandwidth
bol
V
F
I
R
C
J
1.25
0.1
25
1.50
10
V
碌
A
pF
I
F
=20 mA
V
R
=3.0 V
V
F
=0 V
BV
CEO
BV
ECO
I
CEO
30
7.0
65
10
1.0
100
V
V
nA
I
C
=10
碌
A
I
E
=10
碌
A
V
CE
=10 V
C
CE
8.0
pF
V
CE
=0 V
CTR
V
CEsat
C
ISOL
20
50
0.40
0.5
%
V
pF
I
F
=10 mA,
V
CE
=10 V
I
C
=2.0 mA,
I
F
=16 mA
f=1.0 MHz
0.4
150
pF
KHz
f=1.0 MHz
I
C
=2.0 mA,
V
CC
=10 V,
R
L
= 100
鈩?/div>
I
C
=2 mA,
R
E
=100
鈩?/div>
,
V
CE
=10 V
Switching Times,
Output Transistor
t
on
, t
off
3.0
碌
s
5鈥?
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