IL766
DUAL CHANNEL
ILD766
SINGLE CHANNEL
BIDIRECTIONAL INPUT
DARLINGTON OPTOCOUPLERS
FEATURES
鈥?Internal R
BE
for Better Stability
鈥?High Current Transfer Ratios, V
CE
=5 V
IL/ILD766-1: 500% at I
F
=2 mA
IL/ILD766-2: 500% at I
F
=1.0 mA
鈥?BV
CEO
>60 V
鈥?AC or Polarity Insensitive Inputs
鈥?Built-In Reverse Polarity Input Protection
鈥?Industry Standard DIP Package
鈥?Underwriters Lab File #E52744
DESCRIPTION
The IL/ILD766 are bidirectional input optically cou-
pled isolators. They consist of two Gallium Ars-
enide infrared emitting diodes coupled to a silicon
NPN photodarlington per channel.
The IL766 are single channel optocouplers. The
ILD766 has two isolated channels in a single DIP
package. They are designed for applications
requiring detection or monitoring of AC signals.
Maximum Ratings
Emitter
(Each Channel)
Continuous Forward Current .........................60 mA
Power Dissipation at 25
擄
C
Single Channel ....................................... 200 mW
Dual Channel............................................ 90 mW
Derate Linearly from 25
擄
C
Single Channel ................................... 2.6 mW/
擄
C
Dual Channel...................................... 1.2 mW/
擄
C
Detector
(Each Channel
)
Collector-Emitter Breakdown Voltage .............. 60 V
Collector-Base Breakdown Voltage ................. 70 V
Power Dissipation at 25
擄
C ......................... 100 mW
Derate Linearly from 25
擄
C ................... 1.33 mW/
擄
C
Package
Isolation Test Voltage
(t= 1 sec.)................... 7500 VAC
PK
/5300 VAC
RMS
Isolation Resistance
T
A
=25
擄
C
........................................................鈮?/div>
10
12
鈩?/div>
T
A
=100
擄
C
.....................................................鈮?/div>
10
11
鈩?/div>
Total Power Dissipation at 25
擄
C Ambient
(LED Plus Detector)
Single Channel ....................................... 250 mW
Dual Channel.......................................... 400 mW
Derate Linearly from 25
擄
C
Single Channel ................................... 3.3 mW/
擄
C
Dual Channel .................................... 5.3 mW/
擄
C
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Comparative Tracking Index per
DIN IEC 112/VDE303, part 1 ......................... 175
Storage Temperature.................... 鈥?5
擄
C to +150
擄
C
Operating Temperature ................ 鈥?5
擄
C to +100
擄
C
Lead Soldering Time at 260
擄
C.................... 10 sec.
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode/
Cathode 1
Cathode/
Anode 2
6 Base
5 Collector
4 Emitter
.300 (7.62)
Typ.
Single Channel
.039
(1.00)
min.
4擄
Typ.
.018 (0.45)
.022 (0.55)
.335 (8.50)
.343 (8.70)
Pin One
I.D.
NC 3
.130 (3.30)
.150 (3.81)
18擄
Typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
Pin One ID.
4
3
2
1
.255 (6.48)
.268 (6.81)
5
6
7
8
Dual Channel
.379 (9.63)
.390 (9.91)
Anode/
Cathode
Cathode/
Anode
Anode/
Cathode
Cathode/
Anode
1
2
3
4
8 Emitter
7 Collector
6 Collector
5 Emitter
.030 (.76) .130 (3.30)
.045 (1.14) .150 (3.81)
.305 Typ.
(7.75) Typ.
4擄
Typ.
.018 (.46)
.022 (.56)
.030 (.76 )
.040 (1.02)
.100 (2.54)Typ.
3擄鈥?擄
10擄
Typ.
.008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
Electrical Characteristics
(T
A
=25
擄
C)
Sym
Emitter
Forward Voltage
Detector
Breakdown Voltage,
Collector-Emitter
Collector-Base
Leakage Current,
Collector-Emitter
Package
Saturation Voltage,
Collector-Emitter
DC Current Transfer
Ratio
IL766/ILD766-1
IL766-2
Rise Time, Fall Time
V
CEsat
CTR
500
500
100
%
%
碌
s
I
F
=
鹵
2 mA,
V
CE
=5 V
I
F
=
鹵
1.0 mA,
V
CE
=5 V
V
CC
=10 V,
I
F
=
鹵
2 mA,
R
L
=100
鈩?/div>
1.0
V
I
F
=
鹵
10 mA,
I
C
=10 mA
BV
CEO
BV
CBO
I
CEO
60
60
75
90
10
100
V
V
nA
I
C
=1 mA
I
C
=10
碌
A
V
CE
=10 V
V
F
1.2
1.5
V
I
F
=
鹵
10 mA
Min
Typ
Max.
Unit
Condition
5鈥?
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