IL755
DUAL CHANNEL
ILD755
SINGLE CHANNEL
BIDIRECTIONAL INPUT DARLINGTON OPTOCOUPLER
FEATURES
鈥?High Current Transfer Ratios, V
CE
=5 V
IL/ILD755-1: 750% at I
F
=2 mA
鈥?IL/ILD755-2: 1000% at I
F
=1 mA
BV
CEO
>60 V
鈥?AC or Polarity Insensitive Inputs
鈥?Built-In Reverse Polarity Input Protection
鈥?Industry Standard DIP Package
鈥?Underwriters Lab File #E52744
鈥?VDE #0884 Available with Option 1
DESCRIPTION
The IL/ILD755 are bidirectional input optically cou-
pled isolators. They consist of two Gallium Ars-
enide infrared emitting diodes coupled to a silicon
NPN photodarlington per channel.
The IL755 are single channel Darlington optocou-
plers. The ILD755 has two isolated channels in a
single DIP package.
They are designed for applications requiring detec-
tion or monitoring of AC signals.
Maximum Ratings
Emitter
(Each Channel)
Continuous Forward Current .........................60 mA
Power Dissipation at 25
擄
C..........................100 mW
Derate Linearly from 25
擄
C....................1.33 mW/
擄
C
Detector
(Each Channel)
Collector-Emitter Breakdown Voltage...............60 V
Collector-Base Breakdown Voltage .................60 V
Power Dissipation at 25
擄
C
IL755.......................................................200 mW
ILD755 ....................................................150 mW
Derate Linearly from 25
擄
C
ILD755 ................... 2.6 mW/
擄
CILD7552.0 mW/
擄
C
Package
Isolation Test Voltage (PK)
(t= 1 sec.)................... 7500 VAC
PK
/5300 VAC
RMS
Total Power Dissipation at 25
擄
C Ambient
(LED Plus Detector)
IL755.......................................................250 mW
ILD755 ....................................................400 mW
Derate Linearly from 25
擄
C
IL755...................................................3.3 mW/
擄
C
ILD755 ................................................5.3 mW/
擄
C
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Storage Temperature....................鈥?5
擄
C to +150
擄
C
Operating Temperature ................鈥?5
擄
C to +100
擄
C
Lead Soldering Time at 260
擄
C .................... 10 sec.
4擄
Typ.
.018 (.46)
.022 (.56)
.030 (.76 )
.040 (1.02)
.100 (2.54) Typ.
3擄鈥?擄
4擄
Typ.
.018 (0.45)
.022 (0.55)
Dimensions in inches (mm)
Single Channel
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Pin One ID.
Anode/
Cathode 1
Cathode/
Anode 2
NC 3
6 Base
5
4
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
.300 (7.62)
Typ.
.130 (3.30)
.150 (3.81)
18擄 Typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Dual Channel
4
3
2
1
Pin One I.D.
Anode/
Cathode
Cathode/
Anode
Anode/
Cathode
Cathode/
Anode
1
2
3
4
8 Emitter
7 Collector
6 Collector
5 Emitter
.255 (6.48)
.268 (6.81)
5
6
7
8
.379 (9.63)
.390 (9.91)
.030 (.76) .130 (3.30)
.045 (1.14) .150 (3.81)
.305 Typ.
(7.75) Typ.
10
擄
Typ.
.008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
Electrical Characteristics
(T
A
=25
擄
C)
Symbol
Emitter
Forward Voltage
Detector
BV
CEO
BV
CBO
I
CEO
Package
V
CEsat
DC Current
Transfer Ratio
IL755/ILD755-1
IL755/ILD755-2
Rise Time/Fall Time
IL/ILD755-1
Rise Time/Fall Time
IL/ILD755-2
5鈥?
70
碌
s
50
碌
s
CTR
750
1000
%
%
I
F
=
鹵
2 mA,
V
CE
=5 V
I
F
=
鹵
1 mA,
V
CE
=5 V
V
CC
=10 V,
R
L
=100
鈩?/div>
,
I
F
=2 mA
V
CC
=10 V,
R
L
=100
鈩?/div>
,
I
F
=1mA
1.0
I
F
=
鹵
10 mA,
I
C
=10 mA
60
60
75
90
10
100
V
V
nA
I
C
=1 mA
I
C
=10
碌
A
V
CE
=10 V
V
F
1.2
1.5
V
I
F
=
鹵
10 mA
Min.
Typ.
Max.
Unit
Condition
INFINEON
1
2
3
