鈥?/div>
V
VDE #0884 Available with Option 1
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
Anode/
Cathode 1
Cathode/ 2
Anode
NC 3
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4擄
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18擄
.031 (0.80) min. 3擄鈥?擄
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
typ.
.300鈥?347
(7.62鈥?.81)
.114 (2.90)
.130 (3.0)
.300 (7.62)
typ.
6
5 Collector
4 Emitter
DESCRIPTION
The IL755B is a bidirectional input, optically cou-
pled isolator consisting of two Gallium Arsenide
infrared emitters and a silicon photodarlington
sensor.
Maximum Ratings
(at 25
擄
C)
Emitter (Drive Circuit)
Continuous Forward Current ......................... 60 mA
Power Dissipation at 25
擄
C.......................... 100 mW
Derate Linearly from 55
擄
C .................... 1.33 mW/
擄
C
Detector
Collector-Emitter Breakdown Voltage .............. 60 V
Emitter-Collector Breakdown Voltage ............... 12 V
Power Dissipation at 25
擄
C Ambient ........... 200 mW
Derate Linearly from 25
擄
C ...................... 2.6 mW/
擄
C
Package
Isolation Test Voltage
(PK), t=1.0 sec. .................................... 5300 V
RMS
Dissipation at 25
擄
C..................................... 250 mW
Derate Linearly from 25
擄
C ...................... 3.3 mW/
擄
C
Creepage ..................................................
鈮?/div>
7.0 mm
Clearance ..................................................
鈮?/div>
7.0 mm
Isolation Resistance
T
A
=25
擄
C
鈮?/div>
10
12
鈩?/div>
T
A
=100
擄
C
鈮?/div>
10
11
鈩?/div>
Storage Temperature.................... 鈥?5
擄
C to +150
擄
C
Operating Temperature ................ 鈥?5
擄
C to +100
擄
C
Lead Soldering Time at 260
擄
C .................... 10 sec.
Electrical Characteristics
T
A
=25
擄
C
Sym.
Emitter
Forward Voltage
(1)
Detector
Breakdown Voltage,
Collector-Emitter
Leakage Current,
Collector-Emitter
Package
Current Transfer Ratio
IL755B-1
IL755B-2
Saturation Voltage,
Collector-Emitter
Turn-On Time
Turn-Off Time
Notes:
1. Indicates JEDEC registered data.
Min.
Typ.
Max.
Unit
Condition
V
F
鈥?/div>
1.25
1.5
V
I
F
=10 mA
BV
CEO
60
鈥?/div>
75
1.0
鈥?/div>
100
V
nA
I
C
=1.0 mA
I
F
=0
V
CE
=10 V
I
F
=0
I
CEO
CTR
750
1000
鈥?/div>
鈥?/div>
%
V
CE
=5.0 V
I
F
=
鹵
2.0 mA
I
F
=
鹵
1.0 mA
I
C
=10 mA
I
F
=
鹵
10 mA
V
CC
=10 V
I
F
=
鹵
2.0 mA
R
L
=100
鈩?/div>
V
CEsat
t
on
t
off
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
200
V
碌
s
錚?/div>
2001 In鏗乶eon Technologies Corp. 鈥?Optoelectronics Division 鈥?San Jose, CA
www.in鏗乶eon.com/opto 鈥?1-888-In鏗乶eon (1-888-463-4636)
2鈥?57
March 2, 2000-09
next
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