- 1, 100% min. at I
- 2, 300% min. at I
- 3, 400% min. at I
- 4, 500% min. at I
鈥?/div>
V
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Pin One I.D.
Anode 1
Cathode 2
NC 3
.300 (7.62)
Typ.
.130 (3.30)
.150 (3.81)
18擄
Typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
6 Base
5 Collector
4 Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4擄
typ.
.018 (0.45)
.022 (0.55)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled isola-
tors employing Gallium Arsenide infrared emitters
and silicon photodarlington detectors. Switching
can be accomplished while maintaining a high
degree of isolation between driving and load cir-
cuits, with no crosstalk between channels.
Maximum Ratings
Emitter
(Each Channel)
Peak Reverse Voltage........................................ 6 V
Continuous Forward Current......................... 60 mA
Power Dissipation at 25
擄
C ......................... 100 mW
Derate Linearly from 25
擄
C ................... 1.33 mW/
擄
C
Detector
(Each Channel)
Power Dissipation at 25
擄
C Ambient........... 150 mW
Derate Linearly from 25
擄
C ..................... 2.0 mW/
擄
C
Package
Isolation Test Voltage
(t=1 sec.)........................................5300 VAC
RMS
Total Package Power Dissipation at 25
擄
C
IL66.......................................................... 250 mW
ILD66 ....................................................... 400 mW
ILQ66 ....................................................... 500 mW
Derate Linearly from 25
擄
C
IL66...................................................... 3.3 mW/
擄
C
ILD66 ................................................. 5.33 mW/
擄
C
ILQ66 ................................................. 6.67 mW/
擄
C
Creepage.................................................7 min mm
Clearance ................................................7 min mm
Comparative Tracking Index..............................175
Isolation Resistance
V
IO
=500 V, T
A
=25
擄
C................................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V, T
A
=100
擄
C..............................
鈮?/div>
10
11
鈩?/div>
Storage Temperature ................... 鈥?5
擄
C to +125
擄
C
Operating Temperature................ 鈥?5
擄
C to +100
擄
C
Lead Soldering Time at 260
擄
C ....................10 sec.
Pin One I.D.
Anode 1
Cathode 2
Cathode 3
5
6
7
8
4
3
2
1
8 Emitter
7 Collector
6 Collector
5 Emitter
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (.76) .130 (3.30)
.045 (1.14) .150 (3.81)
Anode 4
.305
Typ.
(7.75)
Typ.
4擄
Typ.
.018 (.46)
.022 (.56)
.030 (.76 )
.040 (1.02)
.100 (2.54) Typ.
3擄鈥?擄
10擄
Typ.
.008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
Anode 1
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
10 Collector
9
Emitter
Pin
One
I.D.
.255 (6.48)
.268 (6.81)
Cathode 2
Cathode 3
Anode 4
Anode 5
Cathode 6
Cathode 7
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.130 (3.30)
.150 (3.81)
Anode 8
.305 Typ.
(7.75) Typ.
4擄
Typ.
.018 (.46)
.022 (.56)
.030 (.76 )
.040 (1.02)
.100 (2.54) Typ.
3擄鈥?擄
10擄
Typ.
.008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
5鈥?
1
2
3
