IL66B-1, 200% min.
IL66B-2, 750% min.
鈥?/div>
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
3
2
1
pin one
ID.
.248 (6.30)
.256 (6.50)
Anode
1
Cathode
2
NC
3
6
NC
5
Collector
4
Emitter
4
5
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
6
.300 (7.62)
typ.
.130 (3.30)
.138 (3.50)
DESCRIPTION
The IL66B is an optically coupled isolator employ-
ing a Gallium Arsenide infrared emitter and a silicon
photodarlington detector. Switching can be accom-
plished while maintaining a high degree of isolation
between driving and load circuits. They can be
used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic 鏗乪lds.
Maximum Ratings
(at 25擄C)
Emitter
Peak Reverse Voltage ........................................6 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25擄C..........................100 mW
Derate Linearly from 55擄C....................1.33 mW/擄C
Detector
Collector-Emitter Breakdown Voltage.............. 60 V
Emitter-Collector Breakdown Voltage................ 5 V
Power Dissipation at 25擄C Ambient ...........200 mW
Derate Linearly from 25擄C......................2.6 mW/擄C
Package
Isolation Test Voltage (t=1 sec.) ........ 5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25擄C ...............................
鈮?0
12
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V
IO
=500 V, T
A
=100擄C .............................
鈮?0
11
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Total Dissipation at 25擄C ............................250 mW
Derate Linearly from 25擄C......................3.3 mW/擄C
Creepage Path ........................................ 7 min mm
Clearance Path........................................ 7 min mm
Storage Temperature....................鈥?5擄C to +150擄C
Operating Temperature ................鈥?5擄C to +100擄C
Lead Soldering Time at 260擄C .................... 10 sec.
4擄
typ.
18擄 typ.
.031 (0.80)
min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25) typ.
.300 (7.62)
.347 (8.82)
.114 (2.90)
.130 (3.30)
.018 (0.45)
.022 (0.55)
Electrical Characteristics
(T
A
=25擄C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Leakage Current
Collector-Emitter
Package
Current Transfer Ratio
IL66B-1
IL66B-2
Saturation Voltage
Collector-Emitter
Turn-On,Turn-Off
Time
V
CEsat
t
on
,t
off
CTR
200
750
1000
1.0
200
%
%
V
碌s
I
F
=2 mA,
V
C
E=5 V
BV
CEO
I
CEO
60
1.0
100
V
nA
I
C
=100
碌A,
I
F
=0
V
CE
=50 V,
I
F
=0
V
F
I
R
C
O
1.25
0.01
25
1.5
100
V
碌A
pF
I
F
=10 mA
V
R
=3.0 V
V
R
=0 V
Min.
Typ.
Max.
Unit
Condition
I
C
=10 mA,
I
F
=10 mA
V
CC
=10 V
I
F
=2 mA,
R
L
=100
鈩?/div>
5鈥?
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