IL4116
700 V
IL4117
800 V
IL4118
600 V
FEATURES
鈥?High Input Sensltlvity: I
FT
=1.3 mA, PF=1.0;
I
FT
=3.5 mA, Typlcal PF < 1.0
鈥?Zero Voltage Crosslng
鈥?600/700/800 V Blocklng Voltage
鈥?300 mA On-State Current
鈥?High Statlc dv/dt 10,000 V/
碌
sec., typical
鈥?Inverse Parallel SCRs Provide Commutatlng
dv/dt >10 KV/msec.
鈥?Very Low Leakage <10 mA
鈥?Isolation Test Voltage from Double Molded
Package 5300 VACRMS
鈥?Package, 6-Pln DIP
鈥?Underwriters Lab File #E52744
DESCRIPTION
The IL411x consists of an AlGaAs IRLED optically
coupled to a photosensitive zero crossing TRIAC
network. The TRIAC consists of two inverse parallel
connected monolithic SCRs. These three semicon-
ductors are assembled in a six pin 0.3 inch dual in-
line package, using high insulation double molded,
over/under leadframe construction.
High input sensitivity is achieved by using an emit-
ter follower phototransistor and a cascaded SCR
predriver resulting in an LED trigger current of less
than 1.3 mA(DC).
The IL411x uses two discrete SCRs resulting in a
commutating dV/dt greater than 10 KV/ms The use
of a proprietary dv/dt clamp results in a static dv/dt
of greater than 10 KV
/碌
s. This clamp circuit has a
MOSFET that is enhanced when high dv/dt spikes
occur between MT1 and MT2 of the TRIAC. When
conducting, the FET clamps the base of the pho-
totransistor, disabling the 鏗乺st stage SCR predriver.
The zero cross line voltage detection circuit con-
sists of two enhancement MOSFETS and a photo-
diode. The inhibit voltage of the network is
determined by the enhancement voltage of the N-
channel FET. The P-channel FET is enabled by a
photocurrent source that permits the FET to con-
duct the main voltage to gate on the N-channel FET.
Once the main voltage can enable the N-channel, it
clamps the base of the phototransistor, disabling
the 鏗乺st stage SCR predriver.
The blocking voltage of up to 800 V permits control
of off-line voltages up to 240 VAC, with a safety fac-
tor of more than two, and is suf鏗乧ient for as much as
380 VAC. Current handling capability is up to 300
mA RMS continuous at 25
擄
C.
The IL411x isolates low-voltage logic from 120, 240,
and 380 VAC lines to control resistive, inductive, or
capacitive loads including motors, solenoids, high
current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial
controls, of鏗乧e equipment, and consumer appli-
ances.
ZERO VOLTAGE CROSSING
TRIAC DRIVER OPTOCOUPLER
Dimensions in inches (mm)
Pin One ID.
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
LED 1
Anode
LED 2
Cathode
NC
3
ZCC*
6 Triac 2
Anode
5
4
Substrate
do not
connect
Triac
Anode 1
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4擄
Typ.
.018 (0.45)
.022 (0.55)
*Zero Crossing Circuit
.300 (7.62)
Typ.
.130 (3.30)
.150 (3.81)
18擄 Typ.
.020 (.051) Min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Maximum Ratings
Emitter
Reverse Voltage ...................................................................................6 V
Forward Current.............................................................................. 60 mA
Surge Current ................................................................................... 2.5 A
Power Dissipation .........................................................................100 mW
Derate Linearly from 25
擄
C ..................................................... 1.33 mW/
擄
C
Thermal Resistance................................................................... 750
擄
C/W
Detector
Peak Off-State Voltage
IL4116 ...........................................................................................600 V
IL4117 ...........................................................................................700 V
IL4118 ...........................................................................................800 V
RMS On-State Current .................................................................. 300 mA
Single Cycle Surge .............................................................................. 3 A
Total Power Dissipation ................................................................500 mW
Derate Linearly from 25
擄
C ....................................................... 6.6 mW/
擄
C
Thermal Resistance.................................................................... 150
擄
C/W
Package
Storage Temperature ..................................................... 鈥?5
擄
C to +150
擄
C
Operating Temperature ................................................. 鈥?5
擄
C to +100
擄
C
Lead Soldering Temperature ................................................260
擄
C/5 sec.
Isolation Test Voltage ...........................................................5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
擄
C..................................................................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V, T
A
=100
擄
C................................................................
1
2
3
