鈥?/div>
.120
鹵.005
(3.05
鹵.13)
.240
(6.10)
Pin One ID
.192
鹵.005
(4.88
鹵.13)
.004 (.10)
.008 (.20)
Anode 1
.154
鹵.005
C
L (3.91
鹵.13)
.016 (.41)
.015
鹵.002
(.38.05)
鹵
.008 (.20)
5擄 max.
.050 (1.27)
typ.
.040 (1.02)
.020
鹵.004
(.15.10)
鹵
2 plcs.
40擄
Cathode 2
NC 3
NC 4
8 NC
7 Base
6 Collector
5 Emitter
7擄
.058
鹵.005
(1.49
鹵.13)
.125
鹵.005
(3.18
鹵.13)
R.010
Lead
(.25) max. Coplanarity
鹵.0015
(.04)
max.
TOLERANCE:
鹵.005
(unless otherwise noted)
DESCRIPTION
The IL221AT/IL222AT/IL223AT is a high current
transfer ratio (CTR) optocoupler with a Gallium
Arsenide infrared LED emitter and a silicon NPN
photodarlington transistor detector.
This device has a CTR tested at an 1 mA LED
current. This low drive current permits easy interfac-
ing from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard SOIC-
8 foot print which makes it ideally suited for high
density applications. In addition to eliminating
through-holes requirements, this package conforms
to standards for surface mounted devices.
Maximum Ratings
Emitter
Peak Reverse Voltage ............................................ 6.0 V
Continuous Forward Current ............................... 60 mA
Power Dissipation at 25擄C .................................. 90 mW
Derate Linearly from 25擄C ............................ 1.2 mW/擄C
Detector
Collector-Emitter Breakdown Voltage ..................... 30 V
Emitter-Collector Breakdown Voltage ....................... 5 V
Collector-Base Breakdown Voltage ........................ 70 V
Power Dissipation ............................................. 150 mW
Derate Linearly from 25擄C ........................... 2.0 mW/擄C
Package
Total Package Dissipation at 25擄C Ambient
(LED + Detector) ........................................... 240 mW
Derate Linearly from 25擄C ........................... 3.3 mW/擄C
Storage Temperature ......................... 鈥?5擄C to +150擄C
Operating Temperature ..................... 鈥?5擄C to +100擄C
Soldering Time at 260擄C .................................... 10 sec.
Characteristics
(T
A
=25擄C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Base Voltage
Collector-Emitter
Capacitance
Package
DC Current Transfer
Ratio
IL221AT
IL222AT
IL223AT
Collector-Emitter
Saturation Voltage
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
V
F
I
R
C
O
1.0
0.1
25
Max.
1.5
100
Unit
V
碌A(chǔ)
pF
Condition
I
F
=1mA
V
R
=6.0 V
V
F
=0 V,
F=1 MHz
BV
CEO
BV
ECO
BV
CBO
C
CE
30
5
70
3.4
V
V
I
C
=100
碌A(chǔ)
I
E
=100
碌A(chǔ)
I
C
=10
碌A(chǔ)
V
CE
=10 V
I
F
=1 mA,
V
CE
=5 V
pF
CTR
DC
100
200
500
V
CE sat
V
IO
C
IO
R
IO
2500
0.5
100
1
V
I
CE
=0.5 mA,
I
F
=1 mA
VAC
RMS
t=1 sec.
pF
G鈩?/div>
Specifications subject to change.
Semiconductor Group
4鈥?0
10.95
INFINEON
1
2
3
