IL221A/IL222A/IL223A
N
EW
PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
Dimensions in inches (mm)
Anode 1
.154鹵.005
C
L (3.91鹵.13)
.016 (.41)
.015鹵.002
(.38鹵.05)
.008 (.20)
.050 (1.27)
typ.
.040 (1.02)
40擄
7擄
.058鹵.005
(1.49鹵.13)
.125鹵.005
(3.18鹵.13)
Lead
Coplanarity
鹵.0015
(.04)
max.
Cathode 2
NC 3
NC 4
8 NC
7 Base
6 Collector
5 Emitter
FEATURES
鈥?High Current Transfer Ratio, I
F
=1 mA,
IL221A, 100% Minimum
IL222A, 200% Minimum
IL223A, 500% Minimum
鈥?Withstand Test Voltage, 2500 VAC
RMS
鈥?Electrical Speci鏗乧ations Similar to
Standard 6 Pin Coupler
鈥?Industry Standard SOIC-8 Surface
Mountable Package
鈥?Standard Lead Spacing, .05"
鈥?Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
鈥?Compatible with Dual Wave, Vapor Phase
and IR Re鏗俹w Soldering
鈥?Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL221A/IL222A/IL223A is a high current trans-
fer ratio (CTR) optocoupler with a Gallium Arsenide
infrared LED emitter and a silicon NPN photodar-
lington transistor detector.
This device has a CTR tested at an 1 mA LED cur-
rent. This low drive current permits easy interfacing
from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard
SOIC-8 foot print which makes it ideally suited for
high density applications. In addition to eliminating
through-holes requirements, this package con-
forms to standards for surface mounted devices.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25擄C............................90 mW
Derate Linearly from 25擄C......................1.2 mW/擄C
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................5 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25擄C......................2.0 mW/擄C
Package
Total Package Dissipation at 25擄C Ambient
(LED + Detector) ....................................240 mW
Derate Linearly from 25擄C......................3.3 mW/擄C
Storage Temperature ...................鈥?5擄C to +150擄C
Operating Temperature ...............鈥?5擄C to +100擄C
Soldering Time at 260擄C ............................. 10 sec.
.120鹵.005
(3.05鹵.13)
.240
(6.10)
Pin One ID
.192鹵.005
(4.88鹵.13)
.004 (.10)
.008 (.20)
5擄 max.
R.010
(.25) max.
.020鹵.004
(.15鹵.10)
2 plcs.
Characteristics
(T
A
=25擄C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Voltage,
Collector-Base
Capacitance,
Collector-Emitter
Package
DC Current Transfer
Ratio
IL221A
IL222A
IL223A
Saturation Voltage,
Collector-Emitter
Isolation Test
Voltage
Capacitance,
Input toOutput
Resistance,
Input to Output
CTR
DC
100
200
300
V
CEsat
V
IO
2500
1
V
VAC
RMS
I
F
=1 mA,
V
CE
=5 V
B
VCEO
B
VECO
BV
CBO
C
CE
30
5
70
3.4
pF
V
V
I
C
=100
碌A(chǔ)
I
E
=100
碌A(chǔ)
I
C
=10
碌A(chǔ)
V
CE
=10 V
V
F
I
R
C
O
1.0
0.1
25
1.5
100
V
碌A(chǔ)
pF
I
F
=1 mA
V
R
=6.0 V
V
R
=0 V,
F=1 MHz
Min.
Typ.
Max.
Unit
Condition
I
CE
=0.5 mA,
I
F
=1 mA
t=1 sec.
C
IO
R
IO
0.5
100
pF
G鈩?/div>
5鈥?
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