IL215A/216A/217A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
鈥?FEATURES
鈥?High Current Transfer Ratio, I
F
=1 mA
IL215A鈥?0% Minimum
IL216A鈥?0% Minimum
IL217A鈥?00% Minimum
鈥?Isolation Voltage, 2500 VAC
RMS
鈥?Electrical Speci鏗乧ations Similar to
Standard 6 Pin Coupler
鈥?Industry Standard SOIC-8 Surface
Mountable Package
鈥?Standard Lead Spacing, .05"
鈥?Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
鈥?Compatible with Dual Wave, Vapor Phase
and IR Re鏗俹w Soldering
鈥?Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215A/216A/217A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including
a DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL215A//216A/217A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25擄C............................90 mW
Derate Linearly from 25擄C ......................1.2 mW/擄C
Detector
Collector-Emitter Breakdown Voltage ...............30 V
Emitter-Collector Breakdown Voltage .................7 V
Collector-Base Breakdown Voltage ..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25擄C ......................2.0 mW/擄C
Package
Total Package Dissipation at 25擄C Ambient
(LED + Detector).....................................280 mW
Derate Linearly from 25擄C ......................3.3 mW/擄C
Storage Temperature .................. 鈥?5擄C to +150擄C
Operating Temperature .............. 鈥?5擄C to +100擄C
Soldering Time at 260擄C ............................. 10 sec.
Dimensions in inches (mm)
.120鹵.005
(3.05鹵.13)
.240
(6.10)
Pin One ID
.192鹵.005
(4.88鹵.13)
.004 (.10)
.008 (.20)
Anode
.154鹵.005 Cathode
C
L (3.91鹵.13)
NC
NC
.016 (.41)
.015鹵.002
(.38鹵.05)
.008 (.20)
.050 (1.27)
typ.
.021 (.53)
1
2
3
4
8
7
6
5
NC
Base
Collector
Emitter
40擄
7擄
.058鹵.005
(1.49鹵.13)
.125鹵.005
(3.18鹵.13)
Lead
Coplanarity
鹵.0015
(.04)
max.
5擄 max.
R.010
(.25) max.
.020鹵.004
(.15鹵.10)
2 plcs.
Characteristics
(T
A
=25擄C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Dark Current,
Collector-Emitter
Capacitance,
Collector-Emitter
Package
DC Current Transfer
Ratio
IL215A
IL216A
IL217A
Saturation Voltage,
Collector-Emitter
Isolation Test Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
CTR
DC
20
50
100
V
CEsat
V
IO
C
IO
2500
0.5
50
80
130
0.5
VAC
RMS
pF
%
I
F
=10 mA,
V
CE
=5 V
B
VCEO
B
VECO
I
CEOdark
C
CE
30
7
5
10
50
V
V
nA
pF
I
C
=10
碌A(chǔ)
I
E
=10
碌A(chǔ)
V
CE
=10 V
I
F
=0
V
CE
=0
V
F
I
R
C
O
1.0
0.1
25
1.5
100
V
碌A(chǔ)
pF
I
F
=1 mA
V
R
=6.0 V
V
R
=0
Min.
Typ.
Max.
Unit
Condition
I
F
=1 mA,
I
C
=0.1 mA
R
IO
t
on
,t
off
100
3.0
G鈩?/div>
碌s
I
C
=2 mA,
R
E
=100
鈩?
V
CE
=10 V
5鈥?
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