鈥?/div>
.120鹵.005
(3.05鹵.13)
.240
(6.10)
Pin One ID
.192鹵.005
(4.88鹵.13)
.004 (.10)
.008 (.20)
Anode 1
.154鹵.005 Cathode 2
C
L (3.91鹵.13)
NC 3
NC 4
.016 (.41)
.015鹵.002
(.38鹵.05)
.008 (.20)
.050 (1.27)
typ.
.021 (.53)
40擄
8
7
6
5
NC
Base
Collector
Emitter
7擄
.058鹵.005
(1.49鹵.13)
.125鹵.005
(3.18鹵.13)
Lead
Coplanarity
鹵.0015
(.04)
max.
5擄 max.
R.010
(.25) max.
.020鹵.004
(.15鹵.10)
2 plcs.
TOLERANCE:
鹵.005
(unless otherwise noted)
Characteristics
(T
A
=25擄C)
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT//212AT/
213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
I
F
=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25擄C ............................. 90 mW
Derate Linearly from 25擄C ....................... 1.2 mW/擄C
Detector
Collector-Emitter Breakdown Voltage ................ 30 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25擄C ....................... 2.0 mW/擄C
Package
Total Package Dissipation at 25擄C Ambient
(LED + Detector) ...................................... 280 mW
Derate Linearly from 25擄C ....................... 3.3 mW/擄C
Storage Temperature ..................... 鈥?5擄C to +150擄C
Operating Temperature ................. 鈥?5擄C to +100擄C
Soldering Time at 260擄C ............................... 10 sec.
Semiconductor Group
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Symbol Min. Typ.
V
F
I
R
C
O
BV
CEO
BV
ECO
1.3
0.1
25
30
7
5
10
Max. Unit
1.5
100
V
碌A(chǔ)
pF
V
V
50
nA
pF
%
Condition
I
F
=10 mA
V
R
=6.0 V
V
R
=0
I
C
=10
碌A(chǔ)
I
E
=10
碌A(chǔ)
V
CE
=10 V,
I
F
=0
V
CE
=0
I
F
=10 mA
V
CE
=5 V
Collector-Emitter
Dark Current
I
CEOdark
Collector-Emitter
Capacitance
C
CE
Package
DC Current Transfer CTR
DC
IL211AT
20 50
IL212AT
50 80
IL213AT
100 130
Collector-Emitter
Saturation Voltage V
CE sat
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
0.4
I
F
=10 mA,
I
C
=2.0 mA
VAC
RMS
V
IO
C
IO
2500
0.5
100
3.0
pF
G鈩?/div>
碌s
R
IO
t
ON
, t
OFF
I
C
=2 mA,
R
E
=100
鈩?
V
CE
=10 V
Specifications subject to change.
4鈥?
10.95
INFINEON
1
2
3
